LIGHT EMITTING DEVICE

• US 20110169041A1
• Filed: 01/09/2009
• Published: 07/14/2011
• Est. Priority Date: 01/11/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Bae, Duk Kyu, Cho, Hyun Kyong
• Granted Patent: US 8,399,901 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

Disclosed is a light emitting device. The light emitting device comprises a light emitting semiconductor layer comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a first passivation layer on the light emitting semiconductor layer, and a second passivation layer on the first passivation layer and has an elastic modulus of 2.0 to 4.0 GPa.

Claims

1. A light emitting device comprising:

a light emitting semiconductor layer comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer;

a first passivation layer on the light emitting semiconductor layer; and

a second passivation layer on the first passivation layer and has an elastic modulus of 2.0 to 4.0 GPa.

2. The light emitting device as claimed in claim 1, wherein the first passivation layer comprises inorganic material and the second passivation layer comprises organic material.

3. The light emitting device as claimed in claim 1, wherein the first passivation layer has a dielectric constant of 2.0×

10<sup>−

6</sup> to 200×

10<sup>−

6</sup>.

4. The light emitting device as claimed in claim 1, wherein adhesion strength between the first passivation layer and the second passivation layer is 40 to 1000 MPa.

5. The light emitting device as claimed in claim 1, comprising a coupling metal layer and a support layer on the second passivation layer.

6. The light emitting device as claimed in claim 1, wherein the first passivation layer comprises at least one of Si, N, Ti, O, or an SOG (spin on glass).

7. The light emitting device as claimed in claim 1, wherein the first passivation layer comprises at least one of SiO₂, Si₃N₄, TiO₂, SiN, or TiN.

8. The light emitting device as claimed in claim 1, wherein the second passivation layer comprises at least one of polyimide based polymer material, acryl based polymer material or epoxy based polymer material.

9. A light emitting device comprising:

a support layer;

a first electrode layer on the support layer;

a light emitting semiconductor layer on the first electrode layer;

a second electrode layer on the light emitting semiconductor layer;

a first passivation layer which surrounds the light emitting semiconductor layer and comprises inorganic material; and

a second passivation layer which surrounds the first passivation layer and comprises organic material.

10. The light emitting device as claimed in claim 9, comprising a coupling metal layer between the support layer and the first electrode layer.

11. The light emitting device as claimed in claim 9, wherein the second passivation layer has an elastic modulus of 2.0 to 4.0 GPa.

12. The light emitting device as claimed in claim 9, wherein the first passivation layer has a dielectric constant of 2.0×

10<sup>−

6</sup> to 200×

10<sup>−

6</sup>.

13. The light emitting device as claimed in claim 9, wherein adhesion strength between the first passivation layer and the second passivation layer is 40 to 1000 MPa.

14. The light emitting device as claimed in claim 9, wherein the first passivation layer comprises at least one of SiO₂, Si₃N₄, TiO₂, SiN, or TiN.

15. The light emitting device as claimed in claim 9, wherein the second passivation layer comprises at least one of polyimide based polymer material, acryl based polymer material or epoxy based polymer material.