LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM

• US 20110169043A1
• Filed: 01/07/2011
• Published: 07/14/2011
• Est. Priority Date: 01/11/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: KANG, Dae Sung
• Granted Patent: US 8,008,685 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer between the first conductive type semiconductor layer and the second conductive type layer. At least one lateral surface of the light emitting structure layer has cleavage planes of an A-plane and an M-plane.

Claims

1. A light emitting device comprising a light emitting structure layer including:

a first conductive type semiconductor layer;

an active layer on the first conductive type semiconductor layer; and

a second conductive type semiconductor layer on the active layer,

wherein all the sides of the first conductive type semiconductor layer and the second conductive type semiconductor layer of the light emitting structure layer alternately comprise cleaved facets of A-plane and M-plane.

2. The light emitting device according to the claim 1, wherein a C-plane sapphire substrate is disposed under the light emitting structure layer.

3. The light emitting device according to the claim 2, comprising a first electrode layer on the first conductive type semiconductor layer and a second electrode layer on the second conductive type semiconductor layer.

4. The light emitting device according to the claim 1, comprising a first electrode layer on the light emitting structure layer and a second electrode layer under the light emitting structure layer.

5. The light emitting device according to the claim 1, wherein the light emitting structure layer is a III-V group nitride compound semiconductor layer.

6. The light emitting device according to the claim 1, wherein the light emitting structure layer is a GaN-based semiconductor layer.

7. A light emitting device package comprising:

a package body;

a first electrode and a second electrode electrically separated from each other on the package body;

a light emitting device electrically connected with the first electrode and the second electrode on the package body; and

a molding member surrounding the light emitting device on the package body,

wherein the light emitting device comprises a light emitting structure layer having a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, and wherein all the sides of the first conductive type semiconductor layer and the second conductive type semiconductor layer of the light emitting structure layer alternately comprise cleaved facets of A-plane and M-plane.