THROUGH-SILICON VIA FORMED WITH A POST PASSIVATION INTERCONNECT STRUCTURE
First Claim
Patent Images
1. An integrated circuit structure, comprising:
- a semiconductor substrate;
a through-silicon via (TSV) extending into the semiconductor substrate;
a pad formed over the semiconductor substrate and spaced apart from the TSV; and
an interconnect structure formed over the semiconductor substrate and electrically connecting the TSV and the pad;
wherein the interconnect structure comprisesan upper portion which is formed on the pad and extends to electrically connect the TSV; and
a lower portion outside the TSV and adjacent to the pad.
1 Assignment
0 Petitions
Accused Products
Abstract
An integrated circuit structure includes a semiconductor substrate, a through-silicon via (TSV) extending into the semiconductor substrate, a pad formed over the semiconductor substrate and spaced apart from the TSV, and an interconnect structure formed over the semiconductor substrate and electrically connecting the TSV and the pad. The interconnect structure includes an upper portion formed on the pad and a lower portion adjacent to the pad, and the upper portion extends to electrically connect the TSV.
37 Citations
20 Claims
-
1. An integrated circuit structure, comprising:
-
a semiconductor substrate; a through-silicon via (TSV) extending into the semiconductor substrate; a pad formed over the semiconductor substrate and spaced apart from the TSV; and an interconnect structure formed over the semiconductor substrate and electrically connecting the TSV and the pad; wherein the interconnect structure comprises an upper portion which is formed on the pad and extends to electrically connect the TSV; and a lower portion outside the TSV and adjacent to the pad. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 15)
-
-
2. An integrated circuit structure, comprising:
-
a semiconductor substrate; a through-silicon via (TSV) extending into the semiconductor substrate; a pad formed over the semiconductor substrate and spaced apart from the TSV; and an interconnect structure formed over the semiconductor substrate and electrically connecting the TSV and the pad; wherein the interconnect structure comprises an upper portion formed on the pad and a lower portion adjacent to the pad, and the upper portion extends to electrically connect the TSV; and wherein the lower portion of the interconnect structure is a ring surrounding the pad.
-
-
11. An integrated circuit structure, comprising:
-
a semiconductor substrate; a low-k dielectric layer over the semiconductor substrate; a metal line formed in the low-k dielectric layer; a first passivation layer formed on the low-k dielectric layer and exposing a portion of the metal line; a pad formed in the first passivation layer and on the exposed portion of the metal line; a through-silicon via (TSV) passing through the first passivation layer and the low-k dielectric layer and extending into the semiconductor substrate, wherein the TSV is spaced apart from the pad; and an interconnect structure formed over the first passivation layer and electrically connecting the TSV and the pad; wherein the interconnect structure comprises an upper portion which is formed directly on the pad and extends laterally into direct electrical connection with the TSV; and a lower portion which extends from the upper portion toward the substrate, is located outside the TSV, and is free of direct contact with the TSV. - View Dependent Claims (12, 13, 14, 16, 17, 18, 19, 20)
-
Specification