LIGHT EXPOSURE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

• US 20110170084A1
• Filed: 03/23/2011
• Published: 07/14/2011
• Est. Priority Date: 08/12/2005
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ohnuma, Hideto, Nagai, Masaharu
• Application Number:
  US13/069,491
• Publication Number:
  US 20110170084A1
• Time in Patent Office: Days
• US Class Current: 355/71
• CPC Class Codes: G03F 1/50 Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile

Abstract

The present invention provides a light exposure mask which can form a photoresist layer in a semi-transmissive portion with uniform thickness, and a method for manufacturing a semiconductor device in which the number of photolithography steps (the number of masks) necessary for manufacturing a TFT substrate is reduced by using the light exposure mask. A light exposure mask is used, which includes a transmissive portion, a light shielding portion, and a semi-transmissive portion having a light intensity reduction function where lines and spaces are repeatedly formed, wherein the sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion satisfies a conditional expression (2n/3)×m≦L+S≦(6n/5)×m when a resolution of a light exposure apparatus is represented by n and a projection magnification is represented by 1/m (m≧1).

Claims

1. A light exposure system comprising:

a light exposure apparatus having a resolution represented by n and a projection magnification represented by 1/m (m≧

1), and

a light exposure mask comprising a transmissive portion, a light shielding portion, and a semi-transmissive portion,

wherein a relation between a sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion, n, and m satisfies a conditional expression (n/3)×

m≦

L+S≦

(3n/2)×

m.

3. A light exposure system according to claim 1, wherein a relation between n, m, and L satisfies L<

(2n/3)×

m.

5. A light exposure system according to claim 1, wherein the semi-transmissive portion is arranged on a side of the light shielding portion.

2. A light exposure system comprising:

a light exposure apparatus having a resolution represented by n and a projection magnification represented by 1/m (m≧

1), and

a light exposure mask comprising a transmissive portion, a light shielding portion, and a semi-transmissive portion,

wherein a relation between a sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion, n, and m satisfies a conditional expression (2n/3)×

m≦

L+S≦

(6n/5)×

m.

4. A light exposure system according to claim 2, wherein a relation between n, m, and L satisfies L<

(2n/3)×

m.

6. A light exposure system according to claim 2, wherein the semi-transmissive portion is arranged on a side of the light shielding portion.