METHOD FOR MAKING CONTACTLESS PORTABLE OBJECTS

• US 20110171783A1
• Filed: 09/14/2009
• Published: 07/14/2011
• Est. Priority Date: 09/12/2008
• Status: Active Grant

• Current Assignee: Yannick Grasset
• Original Assignee: Yannick Grasset
• Inventors: Grasset, Yannick
• Granted Patent: US 8,409,928 B2
• Time in Patent Office: Days
• US Class Current: 438/118
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/0775 arrangements for connecting the integrated circuit to the antenna
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The invention relates to a method for manufacturing contactless portable objects with an integrated circuit. The method of the invention is characterized in that it comprises the steps of: providing a silicon wafer (1) having integrated circuits (2) comprising plates (7) for connecting said circuits by capacitive coupling to the contact terminals of an antenna conductor circuit (5) provided at the surface of a dielectric substrate (4) of the contactless object; cutting the integrated circuits from said silicon wafer; grasping the integrated circuits using a gripping means of an integrated circuit transfer machine; and transferring the grasped integrated circuits onto the dielectric substrate so that the plates of said circuits are positioned substantially opposite the contact terminals of the antenna circuits. The invention can particularly be used for manufacturing UHF RFID objects.

Claims

1. A method for manufacturing contactless portable objects with integrated circuits, comprising the steps of:

providing a silicon wafer having integrated circuits including plates with a large surface area for connecting said circuits by capacitive coupling to contact terminals of an antenna conductor circuit provided at the surface of a dielectric substrate of the contactless object, wherein said connection plates are arranged on the active side of said integrated circuits;

cutting the integrated circuits from the silicon wafer;

grasping the integrated circuits using a gripping means of an integrated circuit transfer machine; and

transferring the grasped integrated circuits onto the dielectric support so that the plates of said circuits are positioned substantially opposite the contact terminals of the antenna circuits.

2. The method according to claim 1, wherein the surface area of the connection plates on the active side of the integrated circuits is greater than ½

of the surface area of said active side.

3. The method according to claim 1, wherein the transfer of the integrated circuits onto the dielectric substrate is carried out with positioning tolerances of 30 μ

m or more.

4. The method according to claim 1, wherein the transfer of the integrated circuits onto the dielectric substrate is carried out with a production rate of more than 15,000 transfers per hour, for a yield of three sigma.

5. The method according to claim 4, wherein the transfer of the integrated circuits onto the dielectric substrate is carried out with a production rate of 30,000 transfers per hour, for a yield of three sigma.

6. The method according to claim 1, wherein the transfer machine is a machine for the mounting of surface-mounted components.

7. The method according to claim 1, wherein a glue is dispensed between the contact terminals of the antenna circuits prior to the transfer of the integrated circuits, and in that the integrated circuits are glued to said substrate by means of the dispensed glue.

8. The method according to claim 1, wherein the integrated circuits are arranged in the wafer with their active side facing upwards, and in that the grasped integrated circuits are flipped over prior to being transferred onto the dielectric substrate, using a gripping means of the transfer machine.

9. The method according to claim 1, wherein the integrated circuits are arranged in the wafer with their active side facing towards a carrier tape.

10. The method according to claim 1, wherein the integrated circuits are provided with contact pads, the surface area of which is much smaller than the surface area of the active side of said circuits, and in that the surface area of the connection plates is much larger than that of said contact pads.

11. The method according to claim 1, comprising using a transfer machine which provides positioning tolerances for the integrated circuits of 30 μ

m or more, with a production rate of more than 15,000 transfers per hour for a yield of 3 sigma.

12. The method according to claim 11, wherein the production rate is greater than 30,000 transfers per hour.

13. The method according to claim 11, wherein the positioning tolerances lie in the range between 30 and 60 μ

m.

14. The method according to claim 11, wherein the transfer machine is intended for the mounting of surface-mounted components.

15. The method according to claim 3, wherein the transfer of the integrated circuits onto the dielectric substrate is carried out with positioning tolerances in the range between 30 and 60 μ

m.