Three Dimensional Integration and Methods of Through Silicon Via Creation

• US 20110171827A1
• Filed: 01/14/2010
• Published: 07/14/2011
• Est. Priority Date: 01/14/2010
• Status: Active Grant

• Current Assignee: Elpis Technologies Inc. (Wi-LAN Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Wise, Richard, Kinser, Emily R., Yusuff, Hakeem, Farooq, Mukta G.
• Granted Patent: US 8,415,238 B2
• Time in Patent Office: Days
• US Class Current: 438/653
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/76847 the layer being positioned within the main fill metal
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a substrate layer, etching the exposed planar area to form a cavity having a first depth in the structure, removing a second portion of the photoresist to expose a second planar area on the substrate layer, forming a doped portion in the second planar area, and etching the cavity to expose a first conductor in the structure and the doped portion to expose a second conductor in the structure.

Claims

1. A method comprising:

patterning a photoresist layer on a structure to define an opening and expose a first planar area on a substrate layer;

etching the exposed planar area to form a cavity having a first depth in the structure;

removing a second portion of the photoresist to expose a second planar area on the substrate layer;

forming a doped portion in the second planar area; and

etching the cavity to expose a first conductor in the structure and the doped portion to expose a second conductor in the structure.

2. The method of claim 1, wherein the structure includes a first wafer and a second wafer.

3. The method of claim 1, wherein the structure includes a first chip and a second chip.

4. The method of claim 1, wherein the structure has a substrate portion and a wiring level portion, and the substrate includes a silicon material.

5. The method of claim 1, wherein the doped portion is formed by ions deposited at an oblique angle.

6. The method of claim 5, wherein the oblique angle is between 95 degrees and 175 degrees.

7. The method of claim 1, wherein the method further comprises:

removing the remaining photoresist layer;

forming a dielectric portion in the cavity;

removing a portion of the dielectric layer;

depositing a barrier layer on the dielectric layer;

filling the cavity with a conductive material; and

removing the excess conductive material by planarization.

8. The method of claim 7, wherein the conductive material is operative to electrically connect the first conductor to the second conductor.

9. A method comprising:

patterning a photoresist layer on a structure to define an opening and expose a first planar area on a sacrificial substrate layer;

etching to the exposed first planar area to form a cavity having a first depth in the structure;

removing a portion of the photoresist to increase the size of the opening to define a second planar area on the sacrificial substrate layer;

forming a doped portion in the sacrificial substrate layer; and

etching the cavity to increase the depth of the cavity to expose a first conductor in the structure and to increase the planar area and depth of a portion of the cavity to expose a second conductor in the structure.

10. The method of claim 9, wherein the structure includes a first wafer and a second wafer.

11. The method of claim 9, wherein the structure includes a first chip and a second chip.

12. The method of claim 9, wherein the portion of exposed sacrificial substrate layer in the structure is doped with ions deposited at an oblique angle.

13. The method of claim 12, wherein the oblique angle is between 95 degrees and 175 degrees.

14. The method of claim 9, wherein the method further comprises:

removing the photoresist layer, the first sacrificial substrate layer, and the optical planarization layer;

forming a dielectric portion in the cavity;

removing a portion of the dielectric layer;

depositing a barrier layer on the dielectric layer;

filling the cavity with a conductive material; and

removing the excess conductive material by planarization.

15. The method of claim 14, wherein the conductive material is operative to electrically connect the first conductor to the second conductor.

19. The method of claim 15, wherein the method further comprises:

removing the remaining photoresist layer;

forming a dielectric portion in the cavities;

removing a portion of the dielectric layer;

depositing a barrier layer on the dielectric layer;

filling the cavities with a conductive material; and

removing the excess conductive material by planarization.

20. The method of claim 19, wherein the conductive material is operative to electrically connect the first conductor to the second conductor.

16. A method comprising:

patterning a photoresist layer on a structure to define an opening and expose a first planar area on a substrate layer;

forming doped portions of the substrate layer in the first planar area;

removing a portion of the photoresist to form a second opening defining a second planar area on the substrate layer; and

etching to form a first cavity having a first depth defined by the first opening to expose a first contact in the structure and to form a second cavity defined by the second opening to expose a second contact in the structure.

17. The method of claim 16, wherein the structure includes a first wafer and a second wafer.

18. The method of claim 16, wherein the structure includes a first chip and a second chip.