PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND END POINT DETECTION METHOD

• US 20110174776A1
• Filed: 08/26/2008
• Published: 07/21/2011
• Est. Priority Date: 08/28/2007
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Ota, Kinya, Kabe, Yoshiro, Kitagawa, Junichi
• Application Number:
  US12/675,019
• Publication Number:
  US 20110174776A1
• Time in Patent Office: Days
• US Class Current: 216/59
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01L 21/02238 silicon in uncombined form, i.e. pure silicon
• CPC Class Codes: H01L 21/02252 formation by plasma treatment, e.g. plasma oxidation of the substrate after treatment of an insulating film by plasma H01L21/3105 and subgroups

Abstract

A plasma processing apparatus (100) includes: a plasma generation means for generating a plasma in a processing chamber (1); a measurement section (60) for measuring an integrated value of the particle number of an active species contained in the plasma and moving toward a processing object (wafer W); and a control section (50) for controlling the apparatus in such a manner as to terminate plasma processing when the measured integrated value has reached a set value. The measurement section (60) measures the particle number of the active species by emitting a predetermined laser light from a light source section (61) toward the plasma, and receiving the laser light in a detection section (63) provided with a VUV monochromator.

Claims

1. A plasma processing apparatus comprising:

a processing chamber for carrying out plasma processing of a processing object;

a plasma generation means for generating a plasma in the processing chamber;

a measurement means for measuring an integrated value of the particle number of an active species contained in the plasma and moving toward the processing object; and

a control means for controlling the operation of the plasma processing apparatus in such a manner as to terminate the plasma processing when the integrated value has reached a set value.

2. The plasma processing apparatus according to claim 1, wherein the active species is an O(¹D₂) radical as an active oxidizing species.

3. The plasma processing apparatus according to claim 1, wherein the measurement means includes a light source section for emitting a laser light toward the plasma, and a detection section for detecting the laser light that has passed through the plasma, the light source section and the detection section being disposed such that the light path of the laser light, traveling from the light source section to the detection section, lies in the vicinity of the processing object disposed in the processing chamber.

4. The plasma processing apparatus according to any one of claims 1 to 3, wherein the plasma generation means includes a plane antenna, having a plurality of slots, for introducing microwaves into the processing chamber.

5. A plasma processing method for carrying out plasma processing of a processing object in a processing chamber of a plasma processing apparatus, said method comprising the steps of:

generating a plasma in the processing chamber and initiating plasma processing;

measuring an integrated value of the particle number of an active species contained in the plasma and moving toward the processing object; and

terminating the plasma processing when the integrated value has reached a set value.

6. The plasma processing method according to claim 5, wherein the active species is an O(¹D₂) radical as an active oxidizing species.

7. The plasma processing method according to claim 5, wherein the active species is one which is generated in an upper space in the processing chamber and moves downward toward the processing object, and wherein the measurement of the active species is carried out in the vicinity of the processing object.

8. The plasma processing method according to any one of claims 5 to 7, wherein the plasma processing apparatus is of the type that introduces microwaves into the processing chamber by means of a plane antenna having a plurality of slots.

9. An end point detection method for detecting the end point of plasma processing of a processing object as carried out in a processing chamber of a plasma processing apparatus, said method comprising the steps of:

generating a plasma in the processing chamber and initiating plasma processing;

measuring an integrated value of the particle number of an active species contained in the plasma and moving toward the processing object; and

detecting the end point of the plasma processing based on a determination as to whether the integrated value has reached a set value.

10. The end point detection method according to claim 9, wherein the active species is an O(¹D₂) radical as an active oxidizing species.

11. The end point detection method according to claim 9, wherein the active species is one which is generated in an upper space in the processing chamber and moves downward toward the processing object, and wherein the measurement of the active species is carried out in the vicinity of the processing object.

12. The end point detection method according to any one of claims 9 to 11, wherein the plasma processing apparatus is of the type that introduces microwaves into the processing chamber by means of a plane antenna having a plurality of slots.

13. A computer-readable storage medium in which is stored a control program which operates on a computer, said control program, upon its execution, controlling a plasma processing apparatus such that it carries out an end point detection method for detecting the end point of plasma processing of a processing object as carried out in a processing chamber of the plasma processing apparatus, said end point detection method comprising the steps of:

generating a plasma in the processing chamber and initiating plasma processing;

measuring an integrated value of the particle number of an active species contained in the plasma and moving toward the processing object; and

detecting the end point of the plasma processing based on a determination as to whether the integrated value has reached a set value.

14. A plasma processing apparatus comprising:

a processing chamber for processing a processing object by using a plasma;

a plane antenna, having a plurality of slots, for introducing microwaves into the processing chamber;

a gas supply mechanism for supplying a gas into the processing chamber;

an exhaust mechanism for evacuating and depressurizing the processing chamber; and

a control section for controlling the operation of the plasma processing apparatus such that it carries out an end point detection method for detecting the end point of plasma processing of the processing object as carried out in the processing chamber, said end point detection method comprising the steps of;

generating a plasma in the processing chamber and initiating plasma processing;

measuring an integrated value of the particle number of an active species contained in the plasma and moving toward the processing object; and

detecting the end point of the plasma processing based on a determination as to whether the integrated value has reached a set value.