SOLID STATE LIGHTING DEVICE ON A CONDUCTIVE SUBSTRATE

• US 20110175055A1
• Filed: 01/21/2010
• Published: 07/21/2011
• Est. Priority Date: 01/21/2010
• Status: Active Grant

• Current Assignee: Siphoton Incorporated
• Original Assignee: Siphoton Incorporated
• Inventors: Pan, Shaoher X.
• Granted Patent: US 8,674,383 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/54 having a particular shape

Abstract

A light emitting device includes a conductive substrate having a first substrate surface and comprising a conductive material, a protrusion formed on the conductive substrate, wherein the protrusion is defined in part by a first protrusion surface that is not parallel to the first substrate surface, and light emission layers disposed over the first protrusion surface. The light emission layers can emit light when an electric field is applied across the light emission layers.

Claims

1. A light emitting device, comprising:

a conductive substrate having a first substrate surface, wherein the conductive substrate comprises a conductive material;

a protrusion formed on the conductive substrate, wherein the protrusion is defined in part by a first protrusion surface that is not parallel to the first substrate surface; and

light emission layers disposed over the first protrusion surface, wherein the light emission layers are configured to emit light when an electric field is applied across the light emission layers.

2. The light emitting device of claim 1, wherein the conductive material includes a metallic material or a conducting polymer.

3. The light emitting device of claim 1, wherein the protrusion has the shape of a pyramid or a truncated pyramid, wherein the first substrate surface is a substantially flat face in part defining the pyramid or the truncated pyramid.

4. The light emitting device of claim 3, wherein the first protrusion surface has an angle between 20 degrees and 80 degrees relative to the first substrate surface.

5. The light emitting device of claim 1, wherein the light emission layers comprises at least one quantum well formed by Group III-V compounds.

6. The light emitting device of claim 5, wherein the quantum well is formed by:

a first III-V nitride layer;

a quantum-well layer on the first III-V nitride layer; and

a second III-V nitride layer on the quantum well layer.

7. The light emitting device of claim 1, further comprising a reflective layer formed between the conductive substrate and the light emission layers.

8. The light emitting device of claim 7, wherein the reflective layer comprises aluminum.

9. The light emitting device of claim 1, further comprising a transparent conductive layer formed over the light emission layers, wherein the electric field across the light emission layers is produced by a voltage applied between the transparent conductive layer and the conductive substrate.

10. The light emitting device of claim 9, further comprising an electrode layer around the protrusion, wherein the electrode layer is in electric connection with the transparent conductive layer.

11. A light emitting device, comprising:

a non-crystalline conductive substrate; and

light emission layers having monolithic crystal structures disposed over the conductive substrate, wherein the light emission layers are configured to emit light when an electric field is applied across the light emission layers.

12. The light emitting device of claim 11, wherein the light emission layers comprises a monolithic quantum well formed by Group III-V compounds.

13. The light emitting device of claim 12, wherein the monolithic quantum well is formed by:

a first III-V nitride layer;

a quantum-well layer on the first III-V nitride layer; and

a second III-V nitride layer on the quantum well layer.

14. The light emitting device of claim 11, further comprising:

a reflective layer formed between the conductive substrate and the light emission layers.

15. The light emitting device of claim 11, further comprising:

a transparent conductive layer formed over the light emission layers, wherein the electric field across the light emission layers is produced by a voltage applied between the transparent conductive layer and the conductive substrate.

16. The light emitting device of claim 11, further comprising a protrusion formed on the conductive substrate, wherein the conductive substrate comprises a first substrate surface outside of the protrusion, wherein the protrusion is defined in part by a first protrusion surface that is not parallel to the first substrate surface.

17. The light emitting device of claim 16, wherein the protrusion has the shape of a pyramid or a truncated pyramid.

18. The light emitting device of claim 11, wherein the non-crystalline conductive substrate comprises a metallic material or a conducting polymer

19. A light emission module, comprising:

a mounting substrate having a first electrode and a second electrode;

one or more light emitting structures constructed on a conductive substrate, wherein each of the one or more light emitting structures comprises light emission layers and a transparent conductive layer on the light emission layers, wherein the light emission layers in each of one or more light emitting structures are configured to emit light when a voltage is applied between the transparent conductive layer and the conductive substrate; and

an electric interconnect configured to clamp the one or more light emitting structures to the mounting substrate to allow the first electrode to be in electrical connection with the conductive substrate and the second electrode to be in electric connection with the transparent conductive layer.

20. The light emission module of claim 19, wherein the one or more light emitting structures comprise one or more protrusions on the conductive substrate, wherein the light emission layers are formed on the one or more protrusions.

21. The light emission module of claim 20, wherein the one or more light emitting structures further comprise an electrode layer around the protrusion, the electrode layer in electric connection with the transparent conductive layer, wherein the electric interconnect is configured to electrically connect the electrode layer to the second electrode.

22. The light emission module of claim 19, wherein the electric interconnect includes a window over the light emission layers in the one or more light emitting structures to allow light emitted from the light emission layers to pass through when the electric interconnect clamps the one or more light emitting structures to the mounting substrate.