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LIGHT-EMITTING-DIODE CHIP COMPRISING A SEQUENCE OF GaN-BASED EPITAXIAL LAYERS WHICH EMIT RADIATION AND A METHOD FOR PRODUCING THE SAME

  • US 20110175058A1
  • Filed: 04/04/2011
  • Published: 07/21/2011
  • Est. Priority Date: 05/26/2000
  • Status: Active Grant
First Claim
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1. A light-emitting diode chip comprising:

  • a GaN-based, radiation-emitting epitaxial layer sequence comprising an active region, an n-doped layer and a p-doped layer; and

    a reflective contact metallization assigned to said p-doped layer, said reflective contact metallization configured to reflect radiation emitted by the radiation-emitting layer sequence and comprising;

    a radiation permeable contact layer and a reflective layer, wherein said radiation permeable contact layer is arranged between said p-doped layer and said reflective layer, andwherein said radiation permeable contact layer has a thickness of 10 nm or more.

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