SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a first transistor comprising;
a first channel formation region including a first semiconductor material;
impurity regions provided with the first channel formation region interposed therebetween;
a first gate insulating layer provided over the first channel formation region;
a first gate electrode overlapping with the first channel formation region and is provided over the first gate insulating layer; and
a first source or drain electrode electrically connected to one of the impurity regions, anda second transistor comprising;
a second source electrode;
a second drain electrode;
a second channel formation region including a second semiconductor material and electrically connected to the second source electrode and the second drain electrode;
a second gate insulating layer provided over the second channel formation region; and
a second gate electrode overlapping with the second channel formation region and provided over the second gate insulating layer,wherein the first transistor and the second transistor are provided so that at least part thereof overlap with each other, andwherein one of the second source electrode and the second drain electrode is electrically connected to the first gate electrode.
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Accused Products
Abstract
To provide a storage device in which advantages of both a nonvolatile storage device and a volatile storage device can be obtained, a semiconductor device includes a first transistor provided in or over a substrate and a second transistor provided above the first transistor, where at least part of the first transistor and the second transistor are overlapped with each other, and a gate electrode of the first transistor and a source or drain electrode of the second transistor are electrically connected to each other. It is preferable that the first transistor be provided using single crystal silicon and the second transistor be provided using an oxide semiconductor having extremely low off-state current.
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Citations
32 Claims
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1. A semiconductor device comprising:
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a first transistor comprising; a first channel formation region including a first semiconductor material; impurity regions provided with the first channel formation region interposed therebetween; a first gate insulating layer provided over the first channel formation region; a first gate electrode overlapping with the first channel formation region and is provided over the first gate insulating layer; and a first source or drain electrode electrically connected to one of the impurity regions, and a second transistor comprising; a second source electrode; a second drain electrode; a second channel formation region including a second semiconductor material and electrically connected to the second source electrode and the second drain electrode; a second gate insulating layer provided over the second channel formation region; and a second gate electrode overlapping with the second channel formation region and provided over the second gate insulating layer, wherein the first transistor and the second transistor are provided so that at least part thereof overlap with each other, and wherein one of the second source electrode and the second drain electrode is electrically connected to the first gate electrode. - View Dependent Claims (4, 7, 10, 13, 16, 19, 22, 27, 30)
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2. A semiconductor device comprising:
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a first transistor comprising; a first channel formation region including a first semiconductor material; impurity regions provided with the first channel formation region interposed therebetween; a first gate insulating layer provided over the first channel formation region; a first gate electrode which overlapping with the first channel formation region and provided over the first gate insulating layer; and a first source or drain electrode electrically connected to one of the impurity regions, a second transistor comprising; a second source electrode; a second drain electrode; a second channel formation region including a second semiconductor material and electrically connected to the second source electrode and the second drain electrode; a second gate insulating layer provided over the second channel formation region; and a second gate electrode overlapping with the second channel formation region and provided over the second gate insulating layer, and a capacitor comprising; one of the second source electrode and the second drain electrode; the second gate insulating layer; and an electrode for the capacitor provided over the second gate insulating layer, wherein the first transistor and the second transistor are provided so that at least part thereof overlap with each other, wherein one of the second source electrode and the second drain electrode is electrically connected to the first gate electrode. - View Dependent Claims (5, 8, 11, 14, 17, 20, 23, 25, 28, 31)
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3. A semiconductor device comprising:
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a first transistor comprising; a first channel formation region including a first semiconductor material; a first gate insulating layer; a first gate electrode; and a first source and drain electrode, a second transistor comprising; a second source electrode; a second drain electrode; a second channel formation region including a second semiconductor material; a second gate insulating layer; and a second gate electrode, an insulating layer provided over and in contact with the first transistor, and a capacitor comprising; one of the second source electrode and the second drain electrode; the second gate insulating layer; and an electrode for the capacitor provided over the second gate insulating layer, wherein the second transistor provided over the insulating layer, wherein the first gate electrode is exposed from a top surface of the insulating layer, and wherein one of the second source electrode and the second drain electrode is electrically connected to the first gate electrode. - View Dependent Claims (6, 9, 12, 15, 18, 21, 24, 26, 29, 32)
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Specification