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SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE

  • US 20110175090A1
  • Filed: 03/28/2011
  • Published: 07/21/2011
  • Est. Priority Date: 06/20/2003
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • an active layer, to which group I elements, group III elements, group IV elements, group V elements, or group VII elements are added, and which is made of a semiconductor containing (i) polycrystalline ZnO or polycrystalline MgxZn1-xO, (ii) amorphous ZnO or amorphous MgxZn1-xO, or (iii) either (a) mixture of the polycrystalline ZnO and the amorphous ZnO or (b) a mixture of the polycrystalline MgxZn1-xO and the amorphous MgxZn1-xO;

    a blocking member made of a plurality of blocking layers for blocking a region of the active layer from an atmosphere in which region movable electric charges move;

    a gate electrode for controlling movement of the movable electric charges in the active layer;

    a gate insulating layer, which serves as one of the plurality of blocking layers, for insulating the active layer from the gate electrode;

    a source electrode serving as one of the plurality of blocking layers, the source electrode being connected to the active layer; and

    a drain electrode serving as one of the plurality of blocking layers, the drain electrode being connected to the active layer,at least one of the plurality of blocking layers, in addition to the source electrode and the drain electrode and the gate insulating layer, each of the at least one of the plurality of blocking layers being made of SiO2, Al2O3, AIN, MgO, Ta2O5, TiO2, ZrO2, stab-ZrO2, CeO2, K2O, Li2O, Na2O, Rb2O, In2O3, La2O3, Sc2O3, Y2O3, KNbO3, KTaO3, BaTiO3, CaSnO3, CaZrO3, CdSnO3, SrHfO3, SrSnO3, SrTiO3, YScO3, CaHfO3, MgCeO3, SrCeO3, BaCeO3, SrZrO3, BaZrO3, LiGaO2, a mixed crystal of LiGaO2 such as (Li1-(x+y)NaxKy)(Ga1-zAlz)O2, or a solid solution containing at least two of them.

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