SEMICONDUCTOR CHIP ASSEMBLY WITH POST/BASE HEAT SPREADER AND PLATED THROUGH-HOLE

• US 20110175136A1
• Filed: 04/02/2011
• Published: 07/21/2011
• Est. Priority Date: 03/25/2008
• Status: Active Grant

• Current Assignee: Bridge Semiconductor Corporation
• Original Assignee: Bridge Semiconductor Corporation
• Inventors: Lin, Charles W.C., Wang, Chia-Chung
• Granted Patent: US 8,129,742 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32188 the layer connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83855 Hardening the adhesive by curing, i.e. thermosetting
• CPC Class Codes: H01L 2224/85207 Thermosonic bonding
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 24/16 of an individual bump connector
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 24/85 using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/16195 : Flat cap [not enclosing an internal cavity]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 33/483 : Containers
• CPC Class Codes: H01L 33/642 : characterized by the shape
• CPC Class Codes: H05K 1/0204 : using means for thermal conduction connection in the thickness direction of the substrate H05K1/0207 takes precedence
• CPC Class Codes: H05K 2201/09054 : Raised area or protrusion of metal substrate
• CPC Class Codes: H05K 2201/10106 : Light emitting diode [LED]
• CPC Class Codes: H05K 2203/0369 : Etching selective parts of a metal substrate through part of its thickness, e.g. using etch resist
• CPC Class Codes: H05K 3/0061 : onto a metallic substrate, e.g. a heat sink heat sinks for electric apparatus H05K7/20

Abstract

A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a post and a base. The conductive trace includes a pad, a terminal and a plated through-hole. The semiconductor device is electrically connected to the conductive trace and thermally connected to the heat spreader. The post extends upwardly from the base into an opening in the adhesive, and the base extends laterally from the post. The conductive trace provides signal routing between the pad and the terminal using the plated through-hole.

Claims

1. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post and a base, wherein the post is adjacent to the base and extends above the base in an upward direction, and the base extends below the post in a downward direction opposite the upward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions; and

a conductive trace that includes a pad, a terminal and a plated through-hole, wherein the plated through-hole extends below the pad and above the terminal and an electrically conductive path between the pad and the terminal includes the plated through-hole;

wherein the semiconductor device overlaps the post, is electrically connected to the pad and thereby electrically connected to the terminal, and is thermally connected to the post and thereby thermally connected to the base;

wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad; and

wherein the post extends into the opening and the base and the terminal have the same thickness and are coplanar with one another.

2. The assembly of claim 1, wherein the semiconductor device is an LED chip.

3. The assembly of claim 1, wherein the semiconductor device is electrically connected to the pad using a wire bond and is thermally connected to the post using a die attach.

4. The assembly of claim 1, wherein the adhesive contacts the post, the base, the terminal and the plated through-hole.

5. The assembly of claim 1, wherein the adhesive covers and surrounds the post in the lateral directions.

6. The assembly of claim 1, wherein the adhesive is coplanar with a top of the post.

7. The assembly of claim 1, wherein the adhesive extends to peripheral edges of the assembly.

8. The assembly of claim 1, wherein the plated through-hole extends to a peripheral edge of the assembly.

9. The assembly of claim 1, wherein the plated through-hole is spaced from peripheral edges of the assembly.

10. The assembly of claim 1, wherein the post is integral with the base.

11. The assembly of claim 1, wherein the post is coplanar with the adhesive at the base.

12. The assembly of claim 1, wherein the post has a diameter that decreases as it extends upwardly from the base to its top.

13. The assembly of claim 1, wherein the base covers the post in the downward direction, supports the adhesive and is spaced from peripheral edges of the assembly.

14. The assembly of claim 1, wherein the heat spreader includes a cap that extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post and that contacts and overlaps the adhesive.

15. The assembly of claim 14, wherein the base, the cap, the pad, the terminal and the plated through-hole are the same metals, include a gold, silver or nickel surface layer and are primarily copper, the post is copper, the heat spreader includes a buried copper core shared by the post, the base and the cap and the conductive trace includes a buried copper core shared by the pad, the terminal and the plated through-hole.

16. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post and a base, wherein the post is adjacent to and integral with the base and extends above the base in an upward direction, and the base extends below the post in a downward direction opposite the upward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions;

a substrate that includes a dielectric layer, wherein an aperture extends through the substrate; and

a conductive trace that includes a pad, a terminal and a plated through-hole, wherein the plated through-hole extends below the pad and above the terminal and an electrically conductive path between the pad and the terminal includes the plated through-hole;

wherein the semiconductor device overlaps the post, is electrically connected to the pad and thereby electrically connected to the terminal, and is thermally connected to the post and thereby thermally connected to the base;

wherein the adhesive is mounted on and extends above the base and the terminal, extends between the post and the substrate, extends between the post and the plated through-hole, extends laterally from the post to or beyond the terminal and is sandwiched between the post and the dielectric layer, between the base and the dielectric layer and between the terminal and the dielectric layer;

wherein the substrate is mounted on the adhesive and extends above the base and the terminal; and

wherein the post extends into the opening and the aperture, the plated through-hole extends above and below the dielectric layer and the base and the terminal have the same thickness and are coplanar with one another.

17. The assembly of claim 16, wherein the semiconductor device is an LED chip.

18. The assembly of claim 16, wherein the semiconductor device is electrically connected to the pad using a wire bond and is thermally connected to the post using a die attach.

19. The assembly of claim 16, wherein the adhesive contacts the post, the base, the terminal and the plated through-hole.

20. The assembly of claim 16, wherein the adhesive covers and surrounds the post in the lateral directions and conformally coats sidewalls of the post and top surface portions of the base and the terminal.

21. The assembly of claim 16, wherein the adhesive is coplanar a top of the post.

22. The assembly of claim 16, wherein the adhesive extends laterally from the post beyond the terminal.

23. The assembly of claim 16, wherein the adhesive extends to peripheral edges of the assembly.

24. The assembly of claim 16, wherein the plated through-hole extends to a peripheral edge of the assembly.

25. The assembly of claim 16, wherein the post is coplanar with the adhesive above and below the dielectric layer.

26. The assembly of claim 16, wherein the post has a diameter that decreases as it extends upwardly from the base to its top.

27. The assembly of claim 16, wherein the base covers the post in the downward direction, supports the substrate and is spaced from peripheral edges of the assembly.

28. The assembly of claim 16, wherein the conductive trace is spaced from the heat spreader, the pad contacts the dielectric layer and is spaced from the adhesive, the terminal contacts the adhesive and is spaced from the dielectric layer and the plated through-hole contacts the adhesive and the dielectric layer.

29. The assembly of claim 16, wherein the heat spreader includes a cap that extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post and that contacts and overlaps the adhesive.

30. The assembly of claim 29, wherein the base, the cap, the pad, the terminal and the plated through-hole are the same metals, include a gold, silver or nickel surface layer and are primarily copper, the post is copper, the heat spreader includes a buried copper core shared by the post, the base and the cap and the conductive trace includes a buried copper core shared by the pad, the terminal and the plated through-hole.

31. A semiconductor chip assembly, comprising:

a semiconductor device;

an adhesive that includes an opening;

a heat spreader that includes a post, a base and a cap, wherein the post is adjacent to and integral with the base, extends above the base in an upward direction and thermally connects the base and the cap, the base extends below the post in a downward direction opposite the upward direction and extends laterally from the post in lateral directions orthogonal to the upward and downward directions, and the cap extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post;

a substrate that includes a dielectric layer, wherein an aperture extends through the substrate;

a conductive trace that includes a pad, a terminal and a plated through-hole, wherein the plated through-hole extends below the pad and above the terminal and an electrically conductive path between the pad and the terminal includes the plated through-hole;

wherein the semiconductor device is mounted on the cap, overlaps the post, is electrically connected to the pad and thereby electrically connected to the terminal, and is thermally connected to the cap and thereby thermally connected to the base;

wherein the adhesive is mounted on and extends above the base and the terminal, extends into a gap in the aperture between the post and the substrate, extends across the dielectric layer in the gap, extends between the post and the plated through-hole in the gap, extends laterally from the post to or beyond the terminal, extends to peripheral edges of the assembly, covers and surrounds the post in the lateral directions and is sandwiched between the post and the dielectric layer in the gap and between the base and the dielectric layer and between the terminal and the dielectric layer outside the gap;

wherein the substrate is mounted on the adhesive and extends above the base and the terminal;

wherein the pad extends above the adhesive and the dielectric layer, the terminal extends below the adhesive and the dielectric layer and the plated through-hole extends through the adhesive and the dielectric layer;

wherein the post extends into the opening and the aperture;

wherein the cap contacts and overlaps the adhesive;

wherein the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another at a surface that faces in the upward direction; and

wherein the base and the terminal have the same thickness and are coplanar with one another at a surface that faces in the downward direction.

32. The assembly of claim 31, wherein the semiconductor device is an LED chip, is mounted on the cap using a die attach, is electrically connected to the pad using a wire bond and is thermally connected to the cap using the die attach.

33. The assembly of claim 31, wherein the adhesive contacts the post and the dielectric layer in the gap and contacts the base, the terminal and the dielectric layer outside the gap, the dielectric layer contacts the pad and is spaced from the post, the base and the terminal, and the adhesive alone can intersect an imaginary horizontal line between the post and the dielectric layer, an imaginary horizontal line between the post and the plated through-hole, an imaginary vertical line between the base and the cap, an imaginary vertical line between the base and the dielectric layer and an imaginary vertical line between the terminal and the dielectric layer.

34. The assembly of claim 31, wherein the post has a diameter that decreases as it extends upwardly from the base to the cap and is coplanar with the adhesive above the dielectric layer at the cap and below the dielectric layer at the base.

35. The assembly of claim 31, wherein the base, the cap, the pad, the terminal and the plated through-hole are the same metals, include a gold, silver or nickel surface layer and are primarily copper, the post is copper, the heat spreader includes a buried copper core shared by the post, the base and the cap and the conductive trace includes a buried copper core shared by the pad, the terminal and the plated through-hole.