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STRAINED CMOS DEVICE, CIRCUIT AND METHOD OF FABRICATION

  • US 20110175166A1
  • Filed: 01/19/2010
  • Published: 07/21/2011
  • Est. Priority Date: 01/19/2010
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device, comprising:

  • providing a strained semiconductor layer having a strain in at least one axis;

    forming at least one long fin and at least one short fin in the semiconductor layer such that the at least one long fin has a strained length along the at least one axis;

    forming an n-type transistor on the at least one long fin; and

    forming a p-type transistor on the at least one short fin.

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