METHOD OF DRIVING TRANSISTOR AND DEVICE INCLUDING TRANSISTOR DRIVEN BY THE METHOD

• US 20110175674A1
• Filed: 01/13/2011
• Published: 07/21/2011
• Est. Priority Date: 01/15/2010
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Abe, Katsumi, Hayashi, Ryo, Shimizu, Hisae
• Granted Patent: US 9,373,724 B2
• Time in Patent Office: Days
• US Class Current: 327/537
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Disclosed is a method of driving a transistor including a semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the first conductive layer, one surface of the second insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the second conductive layer. The method includes applying a voltage VBG that satisfies the relation of VBG≦VON1×C1/(C1+C2) to the second conductive layer.

Claims

1. A method of driving a transistor including a semiconductor layer connected to the source and drain electrodes of the transistor, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the first conductive layer, one surface of the second insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the second conductive layer, and the first conductive layer serves as the gate electrode of the transistor, the method comprising:

applying a voltage VBG to the second conductive layer, the voltage VBG satisfying the relation of VBG≦

VON1×

C1/(C1+C2) where C1 denotes a capacitance per unit area of the first insulating layer, C2 denotes a capacitance per unit area of the second insulating layer, and VON1 denotes a turn-on voltage at which the drain current rises in the transfer characteristic of the transistor when the source voltage is set to a reference voltage and a voltage applied to the second conductive layer is set to 0 V.

3. The method according to claim 1, wherein the transistor includes a channel layer comprising amorphous oxide semiconductor.

5. A device comprising:

a transistor driven by the method according to claim 1.

7. A device comprising:

a transistor driven by the method according to claim 3.

2. A method of driving a transistor including a semiconductor layer connected to the source and drain electrodes of the transistor, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the first conductive layer, one surface of the second insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the second conductive layer, and the first conductive layer serves as the gate electrode of the transistor, the method comprising:

applying a voltage VBG to the second conductive layer, the voltage VBG satisfying the relation of VBG≦

VT1×

C1/(C1+C2) where C1 denotes a capacitance per unit area of the first insulating layer, C2 denotes a capacitance per unit area of the second insulating layer, and VT1 denotes a flat band voltage of the transistor.

4. The method according to claim 2, wherein the transistor includes a channel layer comprising amorphous oxide semiconductor.

6. A device comprising:

a transistor driven by the method according to claim 2.

8. A device comprising:

a transistor driven by the method according to claim 4.