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SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF

  • US 20110176355A1
  • Filed: 01/12/2011
  • Published: 07/21/2011
  • Est. Priority Date: 01/15/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a non-volatile memory cell including a first transistor, a second transistor, and a capacitor,wherein a first semiconductor material included in the first transistor is different from a second semiconductor material included in the second transistor,wherein the first semiconductor material is an oxide semiconductor,wherein one of a source and a drain of the first transistor is electrically connected to the capacitor and a gate of the second transistor, andwherein the non-volatile memory cell is configured to hold data for at least longer than or equal to 1×

    104 seconds without power supply.

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