SEMICONDUCTOR MEMORY DEVICE

• US 20110176377A1
• Filed: 01/13/2011
• Published: 07/21/2011
• Est. Priority Date: 01/20/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: KOYAMA, Jun
• Granted Patent: US 8,514,642 B2
• Time in Patent Office: Days
• US Class Current: 365/200
• CPC Class Codes: G11C 16/0425 comprising cells containing a merged floating gate and select transistor
• CPC Class Codes: G11C 2029/4402 Internal storage of test result, quality data, chip identification, repair information
• CPC Class Codes: G11C 29/82 for EEPROMs
• CPC Class Codes: G11C 29/84 with improved access time or stability
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H10B 41/00 Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
• CPC Class Codes: H10B 41/70 the floating gate being an electrode shared by two or more components

Abstract

A driver circuit having a redundant control function to store address data of a defective memory cell is provided to compensate a defect of a memory cell array. In other words, address data of a defective memory cell is stored not by using part of the memory cell array, but by using a non-volatile memory, which is provided in a memory controller, to store address data of a defective memory cell. The memory controller storing the address data of a defective memory cell contributes an increase in process speed, because it is not necessary to access the memory cell array in order to obtain the address data of the defective memory cell.

Claims

1. A semiconductor memory device comprising:

a memory cell array comprising memory cells arranged in matrix, the memory cell array including a main memory region and a redundant memory region;

a driver circuit configured to drive the memory cell array; and

a memory controller configured to control operation of the driver circuit,

wherein the memory controller comprises;

a memory portion configured to store address data of a defective memory cell in the main memory region; and

a redundant address storage portion configured to store address data of the redundant memory region.

2. The semiconductor memory device according to claim 1, wherein the driver circuit includes at least two circuits.

3. The semiconductor memory device according to claim 1, wherein a row in the redundant memory region is capable of being read out instead of a row having the defective memory cell.

4. The semiconductor memory device according to claim 1, wherein a column in the redundant memory region is capable of being read out instead of a column having the defective memory cell.

5. A semiconductor memory device comprising:

a memory cell array comprising memory cells arranged in matrix, the memory cell array including a main memory region and a redundant memory region;

a driver circuit configured to drive the memory cell array; and

a memory controller configured to control operation of the driver circuit,

wherein the memory controller comprises;

a memory portion configured to store address data of a defective memory cell in the main memory region; and

a redundant address storage portion configured to store address data of the redundant memory region,

wherein the memory portion comprises a memory cell, and the memory cell comprises a first transistor, a second transistor and a capacitor, and

wherein a gate electrode of the first transistor, a drain electrode of the second transistor and an electrode of the capacitor are electrically connected to one another.

6. The semiconductor memory device according to claim 5, wherein the driver circuit includes at least two circuits.

7. The semiconductor memory device according to claim 5, wherein a row in the redundant memory region is capable of being read out instead of a row having the defective memory cell.

8. The semiconductor memory device according to claim 5, wherein a column in the redundant memory region is capable of being read out instead of a column having the defective memory cell.

9. The semiconductor memory device according to claim 5, wherein a channel region of the second transistor is formed in an oxide semiconductor layer.

10. The semiconductor memory device according to claim 5, wherein an off-state current per micrometer of a channel width of the second transistor is 100 aA/μ

m or lower.

11. The semiconductor memory device according to claim 5, wherein a transistor, which is other than the second transistor included in the driver circuit, the memory cell array, and the memory controller includes a silicon semiconductor.

12. A semiconductor memory device comprising:

a memory cell array comprising memory cells arranged in matrix, the memory cell array including a main memory region and a redundant memory region;

a driver circuit configured to drive the memory cell array; and

a memory controller configured to control operation of the driver circuit,

wherein each of the memory cells comprises a first transistor, a second transistor and a first capacitor,

wherein a gate electrode of the first transistor, a drain electrode of the second transistor and an electrode of the first capacitor are electrically connected to one another,

wherein the memory controller comprises;

a memory portion configured to store address data of a defective memory cell in the main memory region; and

a redundant address storage portion configured to store address data of the redundant memory region,

wherein the memory portion comprises a memory cell, and the memory cell comprises a third transistor, a fourth transistor and a second capacitor, and

wherein a gate electrode of the third transistor, a drain electrode of the fourth transistor and an electrode of the second capacitor are electrically connected to one another.

13. The semiconductor memory device according to claim 12, wherein the driver circuit includes at least two circuits.

14. The semiconductor memory device according to claim 12, wherein a row in the redundant memory region is capable of being read out instead of a row having the defective memory cell.

15. The semiconductor memory device according to claim 12, wherein a column in the redundant memory region is capable of being read out instead of a column having the defective memory cell.

16. The semiconductor memory device according to claim 12, wherein each channel region of the second transistor and the fourth transistor is formed in an oxide semiconductor layer.

17. The semiconductor memory device according to claim 12, wherein an off-state current per micrometer of a channel width of each of the second transistor and the fourth transistor is 100 aA/μ

m or lower.

18. The semiconductor memory device according to claim 12, wherein a transistor, which is other than the second transistor and the fourth transistor included in the driver circuit, the memory cell array, and the memory controller includes a silicon semiconductor.