SUPERPIXEL MULTI-WAVEBAND PHOTODETECTOR ARRAY FOR REMOTE TEMPERATURE MEASUREMENT

• US 20110176577A1
• Filed: 12/08/2009
• Published: 07/21/2011
• Est. Priority Date: 12/08/2008
• Status: Abandoned Application

• Current Assignee: California Institute of Technology
• Original Assignee: California Institute of Technology
• Inventors: Liu, John K., Ting, David Z., Bandara, Sumith V., Gunapala, Sarath D., Stirbl, Robert C., Wilson, Daniel W.
• Application Number:
  US12/633,714
• Publication Number:
  US 20110176577A1
• Time in Patent Office: Days
• US Class Current: 374/121
• CPC Class Codes: G01J 2005/0077 Imaging
• CPC Class Codes: G01J 3/36 Investigating two or more bands of a spectrum by separate detectors
• CPC Class Codes: G01J 5/08 Optical arrangements
• CPC Class Codes: G01J 5/0803 Arrangements for time-dependent attenuation of radiation signals
• CPC Class Codes: G01J 5/60 using determination of colour temperature
• CPC Class Codes: G01J 5/80 Calibration using comparison with reference sources G01J5/52

Abstract

A multi-waveband temperature sensor array, in which each superpixel (e.g., 2×2 pixel cell) operates at a distinct thermal infrared (IR) waveband (e.g. four wavebands) is disclosed. Using an example high spatial resolution, four-band thermal IR band photodetector array, accurate temperature measurements on the surface of an object can be made without prior knowledge of the object emissivity. The multiband photodetector may employ intersubband transition in III-V semiconductor-based quantum layered structures where each photodetector stack absorbs photons within the specified wavelength band while allowing the transmission of photons in other spectral bands, thus efficiently permitting multiband detection. This produces multiple, spectrally resolved images of a scene that are recorded simultaneously in a single snapshot of the FPA. From the multispectral images and calibration information about the system, computational algorithms are used to produce the surface temperature map of a target.

Claims

1. An apparatus, comprising:

a photodetector array including one or more superpixels, each comprising a group of detector subpixels and each of the detector subpixels providing an infrared sensor signal from a target location where each of the group of detector subpixels senses in a distinct infrared wavelength band among the group; and

one or more processors for deriving an estimated surface temperature of the target location from a combination of the infrared sensor signal from each of the group of detector subpixels;

wherein the estimated surface temperature is derived by calculating a best fit for an equation form for target emissivity over wavelength from the infrared sensor signal from each of the group of detector subpixels combined.

2. The apparatus of claim 1, wherein the equation form for the target emissivity over wavelength comprises a general polynomial function.

3. The apparatus of claim 2, wherein a total number of the group of photodetectors is one greater than the polynomial constants of the general polynomial function.

4. The apparatus of claim 1, wherein the group for each of the one or more superpixels comprises four subpixels in a 2×

2 pattern.

5. The apparatus of claim 1, wherein each of the one or more superpixels comprises a quantum well infrared photodetector (QWIP).

6. The apparatus of claim 5, wherein the photodetector array comprises a multi-band QWIP focal plane array (FPA) and the one or more superpixels comprise a plurality of superpixels.

7. The apparatus of claim 6, wherein the multi-band QWIP focal plane array (FPA) comprises an InGaAs/GaAs/AlGaAs material system.

8. The apparatus of claim 7, wherein each of the group of subpixels of each of the plurality of superpixels comprises a multi-quantum well (MQW) stack layered in the InGaAs/GaAs/AlGaAs material system for sensing the distinct infrared wavelength band from the target location.

9. The apparatus of claim 8, wherein each multi-quantum well (MQW) stack includes an optical grating formed from one or more adjacent layers in the InGaAs/GaAs/AlGaAs material system.

10. The apparatus of claim 8, wherein the multi-quantum well (MQW) stack for a pair of the group of subpixels are directly layered on one another and the distinct wavelength band for each of the pair are filtered for each of the pair of subpixels with different optical gratings.

11. A method of remote temperature sensing, comprising:

sensing an infrared sensor signal from a target location with one of a group of detector subpixels in a distinct infrared wavelength band among the group of detector subpixels, where one or more superpixels of a photodetector array comprises the group of detector subpixels; and

deriving an estimated surface temperature of the target location from a combination of the infrared sensor signal from each of the group of detector subpixels with one or more processors by calculating a best fit for an equation form for target emissivity over wavelength from the infrared sensor signal from each of the group of detector subpixels combined.

12. The method of claim 11, wherein the equation form for the target emissivity over wavelength comprises a general polynomial function.

13. The method of claim 12, wherein a total number of the group of photodetectors is one greater than the polynomial constants of the general polynomial function.

14. The method of claim 11, wherein the group for each of the one or more superpixels comprises four subpixels in a 2×

2 pattern.

15. The method of claim 11, wherein each of the one or more superpixels comprises a quantum well infrared photodetector (QWIP).

16. The method of claim 15, wherein the photodetector array comprises a multi-band QWIP focal plane array (FPA) and the one or more superpixels comprise a plurality of superpixels.

17. The method of claim 16, wherein the multi-band QWIP focal plane array (FPA) comprises an InGaAs/GaAs/AlGaAs material system.

18. The method of claim 17, wherein each of the group of subpixels of each of the plurality of superpixels comprises a multi-quantum well (MQW) stack layered in the InGaAs/GaAs/AlGaAs material system for sensing the distinct infrared wavelength band from the target location.

19. The method of claim 18, wherein each multi-quantum well (MQW) stack includes an optical grating formed from one or more adjacent layers in the InGaAs/GaAs/AlGaAs material system.

20. The method of claim 18, wherein the multi-quantum well (MQW) stack for a pair of the group of subpixels are directly layered on one another and the distinct wavelength band for each of the pair are filtered for each of the pair of subpixels with different optical gratings.

21. An apparatus, comprising:

a photodetector means for sensing a group of infrared sensor signals from a target location each in a distinct infrared wavelength band among the group; and

a processors means for deriving an estimated surface temperature of the target location from a combination of the group of infrared sensor signals;

wherein the estimated surface temperature is derived by calculating a best fit for an equation form for target emissivity over wavelength from the group of infrared sensor signals.

22. The apparatus of claim 21, wherein the equation form for the target emissivity over wavelength comprises a general polynomial function.

23. The apparatus of claim 22, wherein a total number of the group of infrared sensor signals is one greater than the polynomial constants of the general polynomial function.