PROGRAMMABLE METALLIZATION CELL WITH ION BUFFER LAYER

• US 20110180775A1
• Filed: 01/25/2010
• Published: 07/28/2011
• Est. Priority Date: 01/25/2010
• Status: Active Grant

• Current Assignee: Macronix International Co., Ltd.
• Original Assignee: Macronix International Co., Ltd.
• Inventors: Lee, Feng-Ming, LIN, Yuyu, Chen, Yi-Chou
• Granted Patent: US 8,134,139 B2
• Time in Patent Office: Days
• US Class Current: 257/4
• CPC Class Codes: H10N 70/245 the species being metal cations, e.g. programmable metallization cells
• CPC Class Codes: H10N 70/821 Device geometry
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• CPC Class Codes: H10N 70/8416 adapted for supplying ionic species
• CPC Class Codes: H10N 70/883 Oxides or nitrides

Abstract

A programmable metallization device, comprises a first electrode; a memory layer electrically coupled to the first electrode and adapted for electrolytic formation and destruction of a conducting bridge therethrough; an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer; a conductive ion buffer layer between the ion-supplying layer and the memory layer, and which allows diffusion therethrough of said ions; and a second electrode electrically coupled to the ion-supplying layer. Circuitry is coupled to the device to apply bias voltages to the first and second electrodes to induce creation and destruction of conducting bridges including the first metal element in the memory layer. The ion buffer layer can improve retention of the conducting bridge by reducing the likelihood that the first metallic element will be absorbed into the ion supplying layer.

Claims

1. A programmable metallization device, comprising:

a first electrode;

a memory layer electrically coupled to the first electrode;

an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer;

a conductive ion buffer layer between the ion-supplying layer and the memory layer, and which allows diffusion therethrough of said ions; and

a second electrode electrically coupled to the ion-supplying layer.

2. The memory device of claim 1, wherein the memory layer is adapted for electrolytic formation and destruction of a conducting bridge therethrough, and including

circuitry to apply bias voltages to the first and second electrodes to induce creation and destruction of conducting bridges including the first metal element in the memory layer.

3. The memory device of claim 1, including an intermediate conducting layer between said ion-supplying layer and the second electrode.

4. The memory device of claim 1, wherein said ion-supplying layer comprises a chalcogenide.

5. The memory device of claim 1, wherein said ion buffer layer comprises a metal different than the first metal element and a chalcogen.

6. The memory device of claim 1, wherein said memory layer comprises a dielectric.

7. The memory device of claim 1, wherein said memory layer comprises at least one of silicon oxide and silicon nitride.

8. The memory device of claim 1, wherein said ion-supplying layer comprises at least one of tellurium, selenium and sulfur;

the first metal element comprises at least one of silver, copper and zinc; and

the ion buffer layer comprises a compound including said at least one of tellurium, selenium and sulfur.

9. The memory device of claim 1, wherein said ion supplying layer comprises tellurium;

the first metal element comprises copper, and the ion buffer layer comprises a compound of titanium and tellurium.

10. The memory device of claim 9, wherein the memory layer comprises silicon oxide.

11. The memory device of claim 1, wherein said ion buffer layer has a mixing enthalpy with the first metal element that is lower than a mixing enthalpy of said ion supplying layer with the first metal element.

12. The memory device of claim 1, wherein said ion-supplying layer comprises a compound containing the first metal element, which has an activation energy for formation in the ion supplying layer;

and the ion buffer layer consists essentially of materials having activation energy for bonding with the first metal element that is higher than the activation energy for formation of said compound in the ion supplying layer.

13. A method for manufacturing a programmable metallization device, comprising:

forming a first electrode;

forming a memory layer electrically coupled to the first electrode;

forming an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer;

forming a conductive ion buffer layer between the ion supplying layer and the memory layer, and which allows diffusion therethrough of said ions; and

forming a second electrode electrically coupled to the ion supplying layer.

14. The method for manufacturing of claim 13, wherein the memory layer comprises a material adapted for electrolytic formation and destruction of a conducting bridge therethrough.

15. The method for manufacturing of claim 13, including forming an intermediate conducting layer between said ion supplying layer and the second electrode.

16. The method for manufacturing of claim 13, wherein said ion supplying layer comprises a chalcogenide.

17. The method for manufacturing of claim 13, wherein said ion buffer layer comprises a metal different than the first metal element and a chalcogen.

18. The method for manufacturing of claim 13, wherein said memory layer comprises a dielectric.

19. The method for manufacturing of claim 13, wherein said memory layer comprises at least one of silicon oxide and silicon nitride.

20. The method for manufacturing of claim 13, wherein said ion-supplying layer comprises at least one of tellurium, selenium and sulfur;

the first metal element comprises at least one of silver, copper and zinc; and

the ion buffer layer comprises a compound including said at least one of tellurium, selenium and sulfur.

21. The method for manufacturing of claim 13, wherein said ion-supplying layer comprises tellurium;

the first metal element comprises copper, and the ion buffer layer comprises a compound of titanium and tellurium.

22. The method for manufacturing of claim 21, wherein the memory layer comprises silicon oxide.

23. The method for manufacturing of claim 13, wherein said ion buffer layer has a mixing enthalpy with the first metal element that is lower than a mixing enthalpy of said ion supplying layer with the first metal element.

24. The method for manufacturing of claim 13, wherein said ion-supplying layer comprises a compound containing the first metal element, which has an activation energy for formation in the ion-supplying layer;

and the ion buffer layer consists essentially of materials having activation energy for bonding with the first metal element higher than the activation energy for formation of said compound in the ion supplying layer.

25. A method for manufacturing a programmable metallization device, comprising:

forming a first electrode;

forming a memory layer electrically coupled to the first electrode and adapted for electrolytic formation and destruction of a conducting bridge therethrough by an electrolytic reaction with an ion of a first metal element;

depositing a metal layer on the memory layer, said metal layer not including the first metal element;

depositing a chalcogenide on the metal layer;

forming a second electrode electrically coupled to the chalcogenide; and

annealing the metal layer and chalcogenide to form a compound between the memory layer and the chalcogenide including the metal from the metal layer and a chalcogen from the chalcogenide.

26. The method for manufacturing of claim 25, wherein the second electrode includes the first metal element, and during said annealing, the first metal element diffuses into the chalcogenide.

27. The method for manufacturing of claim 25, including depositing another metal layer on the chalcogenide, and either during said annealing or during another annealing step, forming a compound between the other metal layer and the chalcogenide including a metal from the other metal layer and a chalcogen from the chalcogenide.

28. The method for manufacturing of claim 25, wherein said memory layer comprises a dielectric.

29. The method for manufacturing of claim 25, wherein said first metal element is one of copper, silver and zinc.

30. The method for manufacturing of claim 25, wherein said metal layer includes a refractory metal.

31. The method for manufacturing of claim 25, wherein said first metal element is one of copper, silver and zinc, the metal layer comprises titanium and the chalcogenide comprises tellurium.