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PROGRAMMABLE METALLIZATION CELL WITH ION BUFFER LAYER

  • US 20110180775A1
  • Filed: 01/25/2010
  • Published: 07/28/2011
  • Est. Priority Date: 01/25/2010
  • Status: Active Grant
First Claim
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1. A programmable metallization device, comprising:

  • a first electrode;

    a memory layer electrically coupled to the first electrode;

    an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer;

    a conductive ion buffer layer between the ion-supplying layer and the memory layer, and which allows diffusion therethrough of said ions; and

    a second electrode electrically coupled to the ion-supplying layer.

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