THIN FILM TRANSISTOR AND DISPLAY DEVICE
5 Assignments
0 Petitions
Accused Products
Abstract
Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film 22, a channel protection layer 24, and a passivation film 26 are each in the laminate configuration including a first layer 31 made of aluminum oxide, and a second layer 32 made of an insulation material including silicon (Si). The first and second layers 31 and 32 are disposed one on the other so that the first layer 31 comes on the side of an oxide semiconductor layer 23. The oxide semiconductor layer 23 is sandwiched on both sides by the first layers 31 made of aluminum oxide, thereby suppressing desorption of oxygen and others, and stabilizing the electrical characteristics of a TFT 20. Moreover, since the second layer 32 is made of an insulation material including silicon (Si), the time to be taken for film formation can be reduced compared with a single layer made of aluminum oxide.
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Citations
31 Claims
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1-15. -15. (canceled)
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16. A thin film transistor comprising:
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a gate insulation film between a gate electrode and an oxide semiconductor layer, wherein on a side of the gate electrode and on a side opposite to the gate electrode of the oxide semiconductor layer, a laminated film including a first layer made of aluminum oxide and a second layer made of an insulation material including silicon (Si) is provided. - View Dependent Claims (17, 18, 19, 20)
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21. A thin film transistor, wherein:
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a substrate is provided thereon with, in order, a gate electrode, a gate insulation film, an oxide semiconductor layer, a channel protection film, source/drain electrodes, and a passivation film, and the passivation film is made of an oxide, nitride, or oxynitride containing one or more of aluminum (Al), titanium (Ti), and tantalum (Ta). - View Dependent Claims (22, 23, 24, 25, 26, 27)
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28. A display device comprising:
a thin film transistor; and a display element, wherein the thin film transistor includes a gate insulation film between a gate electrode and an oxide semiconductor layer, and on a side of the gate electrode and on a side opposite to the gate electrode of the oxide semiconductor layer, a laminated film including a first layer made of aluminum oxide and a second layer made of an insulation material including silicon (Si) is provided. - View Dependent Claims (29)
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30. A display device, comprising:
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a thin film transistor; and a display element, wherein the thin film transistor includes in order on a substrate, a gate electrode, a gate insulation film, an oxide semiconductor layer, a channel protection film, a source/drain electrode, and a passivation film, and the passivation film is made of an oxide, nitride, or oxynitride containing one or more of aluminum (Al), titanium (Ti), and tantalum (Ta). - View Dependent Claims (31)
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Specification