MEMORY SYSTEM WITH SECTIONAL DATA LINES
First Claim
1. A non-volatile storage device, comprising:
- non-volatile storage elements;
local data lines in communication with the non-volatile storage elements, the local data lines include a first local data line and a second local data line;
a global data line;
a selection circuit connected the global data line, the local data lines and an unselected bit line signal, the selection circuit selectively connects the global data line to one of the local data lines and connects an unselected local data line to the unselected bit line signal; and
control circuitry in communication with the selection circuit and the global data line, the control circuitry programs and reads the non-volatile storage elements.
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Accused Products
Abstract
A storage system includes a three-dimensional memory array that has multiple layers of non-volatile storage elements grouped into blocks. The blocks are grouped into bays. The storage system includes array lines of a first type in communication with storage elements, array lines of a second type in communication with storage elements, and sense amplifiers. Each block is geographically associated with two sense amplifiers and all blocks of a particular bay share a group of sense amplifiers associated with the blocks of the particular bay. The system includes multiple sets of local data lines in one or more routing metal layers below the three-dimensional memory array and multiple sets of global data lines in one or more top metal layers above the three-dimensional memory array. Each set of one or more blocks include one set of the local data lines. Each bay includes one set of global data lines that connect to the group of sense amplifiers associated with the blocks of the respective bay. Each block includes a subset of first selection circuits for selectively coupling a subset of array lines of the first type to respective local data lines. Each block includes a subset of second selection circuits for selectively coupling a subset of the respective local data lines to global data lines associated with a respective bay.
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Citations
21 Claims
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1. A non-volatile storage device, comprising:
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non-volatile storage elements; local data lines in communication with the non-volatile storage elements, the local data lines include a first local data line and a second local data line; a global data line; a selection circuit connected the global data line, the local data lines and an unselected bit line signal, the selection circuit selectively connects the global data line to one of the local data lines and connects an unselected local data line to the unselected bit line signal; and control circuitry in communication with the selection circuit and the global data line, the control circuitry programs and reads the non-volatile storage elements. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A non-volatile storage device, comprising:
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a plurality of non-volatile storage elements; a plurality of bit lines connected to the non-volatile storage elements; a plurality of word lines connected to the non-volatile storage elements; a plurality of local data lines; connection circuits for selectively connecting bit lines to local data lines; a plurality of global data lines; multiple selection circuits each of which is connected to one of the global data lines, multiple local data lines and a unselected bit line signal, each selection circuit selectively connects a connected global data line to a first local data line of the respective connected multiple local data lines in response to a first selection signal and connects a second local data lines of the respective connected local data lines to the unselected bit line signal in response to the first selection signal; and control circuitry connected to the selection circuits, word lines and global data lines, the control circuitry programs and reads the non-volatile storage elements. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A non-volatile storage device, comprising:
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non-volatile storage elements; local data lines in communication with the non-volatile storage elements, the local data lines include a first local data line, a second local data line, a third local data line and a fourth local data line; a sense amplifier; a global data line in communication with the sense amplifier; an unselected signal line; a first selection signal and a second selection signal; a first switch that is responsive to the first selection signal and the second selection signal for selectively connecting the first local data line to the unselected signal line; a second switch that is responsive to the first selection signal and the second selection signal for selectively connecting the second local data line to the unselected signal line; a third switch that is responsive to the first selection signal and the second selection signal for selectively connecting the third local data line to the unselected signal line; a fourth switch that is responsive to the first selection signal and the second selection signal for selectively connecting the fourth local data line to the unselected signal line; a first pair of transistors that are responsive to the first selection signal and the second selection signal for selectively connecting the first local data line to the global data line; a second pair of transistors that are responsive to the first selection signal and the second selection signal for selectively connecting the second local data line to the global data line; a third pair of transistors that are responsive to the first selection signal and the second selection signal for selectively connecting the third local data line to the global data line; and a fourth pair of transistors that are responsive to the first selection signal and the second selection signal for selectively connecting the fourth local data line to the global data line. - View Dependent Claims (20, 21)
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Specification