SURFACE EMITTING SEMICONDUCTOR LASER

• US 20110182316A1
• Filed: 07/26/2010
• Published: 07/28/2011
• Est. Priority Date: 01/27/2010
• Status: Active Grant

• Current Assignee: Fujifilm Business Innovation Corp. (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Xerox Company Limited (Xerox Holdings Corp.)
• Inventors: Takeda, Kazutaka, KONDO, Takashi
• Granted Patent: US 8,270,448 B2
• Time in Patent Office: Days
• US Class Current: 372/50.12
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/02251 using optical fibres
• CPC Class Codes: H01S 5/02253 using lenses
• CPC Class Codes: H01S 5/0655 Single transverse or lateral mode emission
• CPC Class Codes: H01S 5/1039 Details on the cavity length
• CPC Class Codes: H01S 5/18313 by oxidizing at least one of the DBR layers
• CPC Class Codes: H01S 5/18358 containing spacer layers to adjust the phase of the light wave in the cavity
• CPC Class Codes: H01S 5/3432 the whole junction comprising only (AI)GaAs

Abstract

A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector of a first conduction type that is formed on the substrate and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers; a cavity region that is formed on the first semiconductor multilayer reflector and includes an active region; and a second semiconductor multilayer reflector of a second conduction type that is formed on the cavity region and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers. A cavity length of a cavity that includes the cavity region and the active region between the first semiconductor multilayer reflector and the second semiconductor multilayer reflector is greater than an oscillation wavelength.

Claims

1. A surface emitting semiconductor laser comprising:

a substrate;

a first semiconductor multilayer reflector of a first conduction type that is formed on the substrate and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers;

a cavity region that is formed on the first semiconductor multilayer reflector and is close to an active region; and

a second semiconductor multilayer reflector of a second conduction type that is formed on the cavity region and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers,

a cavity length of a cavity that includes the cavity region and the active region between the first semiconductor multilayer reflector and the second semiconductor multilayer reflector being greater than an oscillation wavelength, and

the cavity region including an electrically conductive region of the first conduction type in proximity to the active region, and a low refractive index region that is interposed between the electrically conductive region and the first semiconductor multilayer reflector and has a smaller refractive index than that of the electrically conductive region.

2. The surface emitting semiconductor laser according to claim 1, further comprising a current path region that is located in an outer circumferential part of the low refractive index region and is electrically connected to the first semiconductor multilayer reflector.

3. The surface emitting semiconductor laser according to claim 1, wherein the low refractive index region is an oxide region.

4. The surface emitting semiconductor laser according to claim 1, wherein the electrically conductive region has a refractive index between the relatively high refractive index layer of the first semiconductor multilayer reflector and the relative low refractive index layer thereof, and the oxide region has a smaller refractive index than that of the relatively low refractive index layer.

5. The surface emitting semiconductor laser according to claim 3, wherein the cavity region includes a layer that is interposed between the electrically conductive region and the oxide region and has a function of suppressing oxidation.

6. The surface emitting semiconductor laser according to claim 3, wherein the electrically conductive region is a compound semiconductor layer having an Al composition, and the oxide region includes a layer defined by oxidizing the compound semiconductor layer including the Al composition.

7. The surface emitting semiconductor laser according to claim 1, wherein the low refractive index region includes an air-layer region.

8. The surface emitting semiconductor laser according to claim 7, wherein the air-layer region is defined by etching an oxidized semiconductor region.

9. The surface emitting semiconductor laser according to claim 7, wherein the air-layer region has an optical thickness greater than that of a spacer layer included in the active region.

10. The surface emitting semiconductor laser according to claim 1, further comprising a current confining layer interposed between the first semiconductor multilayer reflector and the second semiconductor multilayer reflector, and the current confining layer includes an oxide region and an electrically conductive aperture surrounded by the oxide region.

11. The surface emitting semiconductor laser according to claim 10, wherein the oxide region of the current confining layer is simultaneously oxidized with an oxide region of the low refractive index region.

12. The surface emitting semiconductor laser according to claim 1, wherein a resonator formed by the first semiconductor multilayer reflector, the cavity region and the second semiconductor multilayer reflector includes multiple resonance wavelengths.

13. A surface emitting semiconductor laser device comprising:

a surface emitting semiconductor laser; and

an optical component to which light emitted by the surface emitting semiconductor laser is incident the surface emitting semiconductor laser including;

a substrate;

a first semiconductor multilayer reflector of a first conduction type that is formed on the substrate and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers;

a cavity region that is formed on the first semiconductor multilayer reflector and includes an active region; and

a second semiconductor multilayer reflector of a second conduction type that is formed on the cavity region and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers,

a cavity length of a cavity that includes the cavity region and the active region between the first semiconductor multilayer reflector and the second semiconductor multilayer reflector being greater than an oscillation wavelength, and

the cavity region including an electrically conductive region of the first conduction type in proximity to the active region, and a low refractive index region that is interposed between the electrically conductive region and the first semiconductor multilayer reflector and has a smaller refractive index than that of the electrically conductive region.

14. An optical transmission device comprising:

a surface emitting semiconductor device including a surface emitting semiconductor laser and an optical component to which laser emitted by the surface emitting semiconductor laser is incident; and

a transmission part that transmits the light emitted from the surface emitting semiconductor laser device through an optical medium,

the surface emitting semiconductor laser including;

a substrate;

a first semiconductor multilayer reflector of a first conduction type that is formed on the substrate and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers;

a cavity region that is formed on the first semiconductor multilayer reflector and includes an active region; and

a second semiconductor multilayer reflector of a second conduction type that is formed on the cavity region and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers,

a cavity length of a cavity that includes the cavity region and the active region between the first semiconductor multilayer reflector and the second semiconductor multilayer reflector being greater than an oscillation wavelength, and

the cavity region including an electrically conductive region of the first conduction type in proximity to the active region, and a low refractive index region that is interposed between the electrically conductive region and the first semiconductor multilayer reflector and has a smaller refractive index than that of the electrically conductive region.