Methods Of Forming Patterns, And Methods For Trimming Photoresist Features
First Claim
1. A method for trimming a photoresist feature comprising exposing said photoresist feature to a mixture containing chloroform and an oxidant.
1 Assignment
0 Petitions
Accused Products
Abstract
Some embodiments include methods of forming patterns. Photoresist features may be formed over a base, with the individual photoresist features having heights and widths. The photoresist features may be exposed to a combination of chloroform, oxidant and additional carbon-containing material besides chloroform to reduce the widths of the photoresist features while substantially maintaining the heights of the photoresist features. The photoresist features may then be used as a mask to pattern the underlying base, and/or spacers may be formed to be aligned to sidewalls of the photoresist features, and the spacers may be used as the mask to pattern the underlying base.
398 Citations
23 Claims
- 1. A method for trimming a photoresist feature comprising exposing said photoresist feature to a mixture containing chloroform and an oxidant.
-
9. A method of forming a pattern, comprising:
-
photolithographically forming at least one photoresist feature over a base, the photoresist feature having a height and a width; and exposing the photoresist feature to a combination of chloroform, oxidant and additional carbon-containing material besides chloroform to reduce the width of the photoresist feature while substantially maintaining the height of the photoresist feature. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
-
-
19. A method of forming a pattern, comprising:
-
photolithographically forming a plurality of photoresist features over a base, the individual photoresist features having heights and widths; exposing the photoresist features to a combination of chloroform, oxidant and additional carbon-containing material besides chloroform to reduce the widths of the photoresist features while substantially maintaining the heights of the photoresist features; after reducing the widths of the photoresist features, forming spacer material between and over the photoresist features; anisotropically etching the spacer material to form spacers along sidewalls of the photoresist features; and removing the photoresist features to leave the spacers as the pattern over the base. - View Dependent Claims (20, 21, 22, 23)
-
Specification