METHOD OF FABRICATING SEMICONDUCTOR DEVICE

• US 20110183441A1
• Filed: 04/08/2011
• Published: 07/28/2011
• Est. Priority Date: 01/24/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: JEONG, Joo-hyun, Chung, Chul-ho
• Granted Patent: US 8,216,860 B2
• Time in Patent Office: Days
• US Class Current: 438/3
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76841 Barrier, adhesion or liner layers
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device and a method of fabricating a semiconductor device that includes forming an interlayer insulating film on a semiconductor substrate; depositing a first soft magnetic thin film on the interlayer insulating film through sputtering using a target containing at least one of Fe, Co, Ni, or alloys thereof, the target further containing at least one of Ti, Hf, or B, the sputtering being performed using an N₂ reactive gas; forming a metal film on the first soft magnetic thin film; depositing a second soft magnetic thin film on the metal film through sputtering using the same or another target containing at least one of Fe, Co, Ni, or alloys thereof, the target further containing at least one of Ti, Hf, or B, the sputtering being performed using an N₂ reactive gas; and patterning to form an inductor.

Claims

1. A method of fabricating a semiconductor device, comprising:

forming an interlayer insulating film on a semiconductor substrate;

depositing a first soft magnetic thin film on the interlayer insulating film through sputtering using a target comprising at least one of Fe, Co, Ni, or alloys thereof, the target further comprising at least one of Ti, Hf, or B, the sputtering being performed using N₂ reactive gas;

forming a metal film on the first soft magnetic thin film;

depositing a second soft magnetic thin film on the metal film through sputtering using the same or another target comprising at least one of Fe, Co, Ni, or alloys thereof, the target further comprising at least one of Ti, Hf, or B, the sputtering being performed using N₂ reactive gas; and

patterning the first soft magnetic thin film, the metal film, and the second soft magnetic thin film, which are laminated, using a same mask, to form an inductor.

2. The method as claimed in claim 1, wherein the first soft magnetic thin film and the second soft magnetic thin film each have a thickness of about 5,000-10,000 Å

.

3. The method as claimed in claim 1, wherein the metal film comprises aluminum or copper.

4. The method as claimed in claim 1, wherein the depositing of the first soft magnetic thin film and the depositing of the second soft magnetic thin film are conducted using a target comprising Fe, Co and Ti.

5. The method as claimed in claim 1, wherein the interlayer insulating film comprises SiO_x, SiON, TiO_x or TaO_x.

6. A method of fabricating a semiconductor device, the method comprising:

forming an interlayer insulating film having a plurality of lower wire layers on a semiconductor substrate;

depositing a first soft magnetic thin film on the interlayer insulating film through sputtering using a target comprising at least one of Fe, Co, Ni, or alloys thereof, the target further comprising at least one of Ti, Hf, or B, the sputtering being performed using N₂ reactive gas;

forming an uppermost metal wire layer on the first soft magnetic thin film;

depositing a second soft magnetic thin film on the uppermost metal wire layer through sputtering using the same or another target comprising at least one of Fe, Co, Ni, or alloys thereof, the target further comprising at least one of Ti, Hf, or B, the sputtering being performed using N₂ reactive gas; and

patterning the first soft magnetic thin film, the uppermost metal wire layer, and the second soft magnetic thin film, which are laminated, using a same mask, thus forming an inductor and the uppermost wire layer coupled with at least one of the lower wire layers.

7. The method as claimed in claim 6, wherein the first soft magnetic thin film and the second soft magnetic thin film each have a thickness of about 5,000-10,000 Å

.

8. The method as claimed in claim 6, wherein the uppermost wire layer comprises aluminum or copper.

9. The method as claimed in claim 6, wherein the depositing the first soft magnetic thin film and the depositing the second soft magnetic thin film are conducted using a target comprising Fe, Co and Ti.

10. The method as claimed in claim 6, wherein the interlayer insulating film comprises SiO_x, SiON, TiO_x or TaO_x.

11-20. -20. (canceled)