Precursor Composition, Methods of Forming a Layer, Methods of Forming a Gate Structure and Methods of Forming a Capacitor

• US 20110183527A1
• Filed: 02/25/2011
• Published: 07/28/2011
• Est. Priority Date: 08/18/2009
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Ryu, Seung-Min, Kin, Youn-Soo, Choi, Jae-Hyoung, Cho, Kyu-Ho, Lee, Jung-Ho, Cho, Youn-Joung
• Granted Patent: US 8,563,085 B2
• Time in Patent Office: Days
• US Class Current: 438/785
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H10B 12/033 the capacitor extending over the transistor

Abstract

In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.

Claims

1. A method of forming a layer, the method comprising:

stabilizing a precursor composition by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate, the precursor composition including a metal and a ligand chelating to the metal; and

introducing a reactant onto the substrate to bind to the metal in the stabilized precursor composition,

wherein providing the stabilized precursor composition onto the substrate includes introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate,

and wherein the electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.

2. The method of claim 1, wherein the precursor composition includes a first precursor having a first metal and a first ligand and a second precursor having a second metal and a second ligand.

3. The method of claim 2, wherein the first and second metals include zirconium (Zr) or hafnium (Hf).

4. The method of claim 2, further comprising introducing a third precursor onto the substrate after introducing the precursor composition onto the substrate, the third precursor having a third metal and a third ligand.

5. The method of claim 4, wherein the third metal includes silicon (Si).

6. A method of forming a layer, the method comprising:

stabilizing a precursor by contacting the precursor with an electron donating compound to provide a stabilized precursor onto a substrate, the precursor including a metal and a ligand chelating to the metal; and

introducing a reactant onto the substrate to bind to the metal in the stabilized precursor,

wherein the metal includes zirconium or hafnium and the electron donating compound includes alcohol having a carbon atom of about 1 to about 10.

7. A method of forming a layer, the method comprising:

stabilizing a precursor by contacting the precursor with an electron donating compound to provide a stabilized precursor onto a substrate, the precursor including a metal and a ligand chelating to the metal; and

introducing a reactant onto the substrate to bind to the metal in the stabilized precursor,

wherein the precursor includes at least one precursor selected from the group consisting of tetrakis-ethylmethylamido-zirconium(Zr(NCH3C2H5)4), tetrakis-ethylmethylamido-hafnium(Hf(NCH3C2H5)4), tetrakis-diethylamido-zirconium(Zr(N(C2H5)2)4), tetrakis-diethylamido-hafnium(Hf(N(C2H5)2)4), tetrakis-dimethylamido-zirconium(Zr(N(CH3)2)4), tetrakis-dimethylamido-hafnium(Hf(N(CH3)2)4), tetrakis-ethyldimethylamine-zirconium(Zr(N(CH3)2C2H5)4), tetrakis-ethyldimethylamine-hafnium(Hf(N(CH3)2C2H5)4), tetrakis-diethylmethylamine-zirconium(Zr(N(C2H5)2CH3)4), tetrakis-diethylmethylamine-hafnium(Hf(N(C2H5)2CH3)4), tetrakis-triethylamine-zirconium(Zr(N(C2H5)3)4), tetrakis-triethylamine-hafnium(Hf(N(C2H5)3)4), cyclopentadienyl-tris(dimethylamido)zirconium((C5H5)Zr(N(CH3)2)3), cyclopentadienyl-tris(dimethylamido)hafnium((C5H5)Hf(N(CH3)2)3), cyclopentadienyl-tris(ethylmethylamido)zirconium((C5H5)Zr(N(C2H5)(CH3))3) and cyclopentadienyl-tris(ethylmethylamido)hafnium((C5H5)Hf(N(C2H5)(CH3))3).

8. A method of forming a layer, the method comprising:

providing a first precursor onto a substrate, the first precursor including a first metal and a first ligand chelating to the first metal;

providing a second precursor onto the substrate, the second precursor including a second metal and a second ligand chelating to the second metal;

providing an electron donating compound onto the substrate to stabilize the first and second precursors; and

providing a reactant having nitrogen onto the substrate to form a metal nitride layer thereon.

9. The method of claim 8, wherein providing the first precursor, providing the second precursor and providing the electron donating compound comprises:

mixing the first precursor, the second precursor and the electron donating compound to prepare a mixture composition; and

vaporizing the mixture composition to provide stabilized precursors onto the substrate.

10. The method of claim 8, further comprising providing a third precursor onto the substrate, the third precursor including a third metal and a third ligand chelating to the third metal.

11. The method of claim 10, wherein the third metal includes silicon.

12. The method of claim 10, wherein providing the first precursor, providing the second precursor, providing the third precursor and providing the electron donating compound comprises:

simultaneously providing the first precursor and the second precursor during a same time interval;

providing the electron donating compound after providing the first and the second precursors; and

providing the third precursor after providing the electron donating compound.

13. The method of claim 10, wherein providing the first precursor, providing the second precursor, providing the third precursor and providing the electron donating compound comprises:

simultaneously providing the first precursor, the second precursor and the electron donating compound during a same time interval; and

providing the third precursor after providing the first precursor, the second precursor and the electron donating compound.

14. The method of claim 10, wherein providing the first precursor, providing the second precursor, providing the third precursor and providing the electron donating compound comprises:

simultaneously providing the first precursor and the second precursor during a same time interval;

providing the third precursor after providing the first and the second precursors; and

providing the electron donating compound after providing the third precursor.

15. The method of claim 10, wherein providing the first precursor, providing the second precursor, providing the third precursor and providing the electron donating compound comprises:

simultaneously providing the first precursor, the second precursor and the electron donating compound during a same time interval;

further providing the electron donating compound after providing the first precursor, the second precursor and the electron donating compound; and

simultaneously providing the electron donating compound and the third precursor during a same time interval after further providing the electron donating compound.

16-24. -24. (canceled)