METHOD OF IN-PROCESS INTRALAYER YIELD DETECTION, INTERLAYER SHUNT DETECTION AND CORRECTION
First Claim
Patent Images
1. A method for in-process yield evaluation in an array type of device, comprising:
- measuring an electrical property between individual GATE lines, DATA lines, a DATA bus I/O pad, and a GATE bus I/O pad; and
analyzing the measured electrical property to identify at least one of the following;
GATE line open defects,GATE line bridge defects,DATA line open defects,DATA line bridge defects, andinterlayer shunt defects.
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Abstract
A system and method for in-process yield evaluation and correction in an array type of device are provided. The system and method include measuring electrical resistance between individual GATE lines, DATA lines, a DATA bus I/O pad, and a GATE bus I/O pad; and analyzing the measured electrical resistance to identify at least one of the following: GATE line open defects, GATE line bridge defects, DATA line open defects, DATA line bridge defects, and interlayer shunt defects.
107 Citations
28 Claims
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1. A method for in-process yield evaluation in an array type of device, comprising:
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measuring an electrical property between individual GATE lines, DATA lines, a DATA bus I/O pad, and a GATE bus I/O pad; and analyzing the measured electrical property to identify at least one of the following; GATE line open defects, GATE line bridge defects, DATA line open defects, DATA line bridge defects, and interlayer shunt defects. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 21)
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15. A method for in-process correction of defects in an array type of substrate, comprising:
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receiving identified defect types, locations, and process state; dynamically reconfiguring a die or chip design to account for defects on the substrate based at least partially on the received defect types, locations, and process state. - View Dependent Claims (16, 17, 18, 20)
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19. The method of claim 19, further comprising:
correcting any open line defects created by the correction of line bridge and interlayer shunt defects with laser ablation with at least one of the following; a mushroom metal layer, and a VIA layer.
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22. A system for in-process yield evaluation for an array type of device, comprising:
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a system controller; and an electrical measurement device, operatively connected to the system controller; wherein the electrical measurement device measures an electrical property between individual GATE lines, DATA lines, a DATA bus I/O pad, and a GATE bus I/O pad on the array type of device; and wherein the system controller analyzes the measured electrical property to identify at least one of the following on the array type of device; GATE line open defects, GATE line bridge defects, DATA line open defects, DATA line bridge defects, and interlayer shunt defects. - View Dependent Claims (23, 24, 25)
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26. A system for in-process correction of defects in an array type of substrate, comprising:
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a system controller; a mushroom metal and VIA layer definition module; and a digital lithography printer; wherein the mushroom metal and via layer definition module receives defect data from the system controller, where the defect data comprises; identified defect types, defect locations, and a process state; and wherein the mushroom metal and via layer definition module dynamically reconfigures a die or chip design to account for defects on the substrate based at least partially on the received defect types, locations, and process state. - View Dependent Claims (27, 28)
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Specification