SEMICONDUCTOR MEMORY DEVICE
First Claim
1. A semiconductor memory device comprising a memory element including a first transistor and a second transistor,wherein a gate of the first transistor is electrically connected to one of a source and a drain of the first transistor,wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor, andwherein the first transistor includes an oxide semiconductor film.
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Accused Products
Abstract
It is to provide a semiconductor memory device in which high voltage is not needed in writing, a defect is less likely to occur, the writing time is short, and data cannot be rewritten without an increase in cost. The semiconductor memory device includes a memory element which includes a diode-connected first transistor, a second transistor whose gate is connected to one terminal of a source electrode and a drain electrode of the diode-connected first transistor, and a capacitor connected to the one terminal of the source electrode and the drain electrode of the diode-connected first transistor and the gate of the second transistor.
138 Citations
20 Claims
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1. A semiconductor memory device comprising a memory element including a first transistor and a second transistor,
wherein a gate of the first transistor is electrically connected to one of a source and a drain of the first transistor, wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor, and wherein the first transistor includes an oxide semiconductor film.
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9. A semiconductor memory device comprising:
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a first wiring; a second wiring; a third wiring; and a memory element including a first transistor, a second transistor, a third transistor, and a capacitor, wherein a gate of the first transistor is electrically connected to one of a source and a drain of the first transistor, wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor, wherein one of a source and a drain of the second transistor is electrically connected to the first wiring, wherein one of a source and a drain of the third transistor is electrically connected to the gate of the first transistor, wherein the other of the source and the drain of the third transistor is electrically connected to the second wiring, wherein a gate of the third transistor is electrically connected to the third wiring, wherein a first electrode of the capacitor is electrically connected to the gate of the second transistor, and wherein the first transistor includes an oxide semiconductor film. - View Dependent Claims (10, 11, 12, 13)
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14. A semiconductor memory device comprising:
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a first wiring; a second wiring; a third wiring; and a memory element including a first transistor, a second transistor, a third transistor, and a fourth transistor, wherein a gate of the first transistor is electrically connected to one of a source and a drain of the first transistor, wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor, wherein one of a source and a drain of the third transistor is electrically connected to the gate of the first transistor, wherein one of a source and a drain of the second transistor is electrically connected to one of a source and a drain of the fourth transistor, wherein the other of the source and the drain of the fourth transistor is electrically connected to the first wiring, wherein the other of the source and the drain of the third transistor is electrically connected to the second wiring, wherein a gate of the third transistor is electrically connected to the third wiring, and wherein the first transistor includes an oxide semiconductor film. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification