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Gallium Nitride Power Devices Using Island Topography

  • US 20110186858A1
  • Filed: 02/03/2011
  • Published: 08/04/2011
  • Est. Priority Date: 08/04/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a semiconductor layer formed on a main surface of the substrate;

    a plurality of first island electrodes and a plurality of second island electrodes spaced apart from each other so as to be alternatively arranged to produce two-dimensional active regions in all feasible areas of the semiconductor layer, each side of said first island electrodes is opposite a side of said second island electrodes;

    a plurality of strip electrodes that are formed in a region between each said first island electrode and each said second island electrode on the semiconductor layer, said strip electrodes for serving as gate electrodes of a multi-island transistor, said first island electrodes for serving as source electrodes, said second island electrodes for serving as drain electrodes;

    a plurality of connections to each of said first island electrodes and said second island electrodes; and

    a plurality of connections to said gate electrodes at each interstices defined by corners of said first island electrodes and said second island electrodes.

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