ELECTROLUMINESCENT LIGHT-EMITTING DEVICE COMPRISING AN ARRANGEMENT OF ORGANIC LAYERS, AND METHOD FOR ITS PRODUCTION

• US 20110186864A1
• Filed: 01/11/2007
• Published: 08/04/2011
• Est. Priority Date: 01/11/2006
• Status: Active Grant

• Current Assignee: Novaled AG
• Original Assignee: Novaled AG
• Inventors: Harada, Kentaro, Pfeiffer, Martin, Leo, Karl, Schwartz, Gregor, Walzer, Karsten
• Granted Patent: US 8,502,200 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H10K 50/155 comprising dopants
• CPC Class Codes: H10K 50/165 comprising dopants
• CPC Class Codes: H10K 50/814 combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
• CPC Class Codes: H10K 50/824 combined with auxiliary electrodes
• CPC Class Codes: H10K 59/80516 combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
• CPC Class Codes: H10K 59/80521 characterised by their shape
• CPC Class Codes: H10K 59/80522 combined with auxiliary electrodes
• CPC Class Codes: H10K 71/30 Doping active layers, e.g. electron transporting layers
• CPC Class Codes: H10K 85/211 Fullerenes, e.g. C60
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3
• CPC Class Codes: H10K 85/342 comprising iridium
• CPC Class Codes: H10K 85/344 comprising ruthenium
• CPC Class Codes: H10K 85/631 Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
• CPC Class Codes: H10K 85/6572 comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole

Abstract

The invention relates to an electroluminescent light-emitting device comprising an arrangement of organic layers which are applied to a substrate, and also to a method for its production. The arrangement of organic layers comprises the following layers: at least one charge carrier transport layer consisting of organic material, and at least one light-emitting layer consisting of organic material. The arrangement of organic layers furthermore comprises at least one doped fullerene layer which has a doping that increases the electrical conductivity.

Claims

1. An electroluminescent light-emitting device comprising an arrangement of organic layers which are applied to a substrate, the arrangement of organic layers comprising the following layers:

at least one charge carrier transport layer consisting of organic material, and

at least one light-emitting layer consisting of organic material,

characterized in that the arrangement of organic layers comprises at least one doped fullerene layer which has a doping that increases the electrical conductivity.

2. The electroluminescent light-emitting device according to claim 1, characterized in that the at least one doped fullerene layer is doped with organic molecules.

3. The electroluminescent light-emitting device according to claim 1, characterized by at least one metal layer which is formed in direct contact with the at least one doped fullerene layer.

4. The electroluminescent light-emitting device according to claim 3, characterized in that the at least one metal layer is structured.

5. The electroluminescent light-emitting device according to claim 4, characterized in that the at least one metal layer is formed such that it is structured by means of a printing process.

6. The electroluminescent light-emitting device according to claim 1, characterized in that a flat electrode is formed by the at least one doped fullerene layer.

7. The electroluminescent light-emitting device according to claim 1, characterized in that the at least one charge carrier transport layer is formed by the at least one doped fullerene layer.

8. The electroluminescent light-emitting device according to claim 7, characterized in that the at least one doped fullerene layer is formed as an electron transport layer.

9. The electroluminescent light-emitting device according to claim 1, characterized in that arranged between the at least one charge carrier transport layer and the at least one light-emitting layer is a layer which has an exciton energy that is greater than an exciton energy of the at least one light-emitting layer, so that excitons from the at least one light-emitting layer are blocked by the layer.

10. The electroluminescent light-emitting device according to claim 1, characterized in that the arrangement of organic layers comprises an injection layer.

11. The electroluminescent light-emitting device according to claim 10, characterized in that the injection layer consists of a salt of Cs or a salt of Li, in particular LiF or CsF.

12. The electroluminescent light-emitting device according to claim 1, characterized in that the at least one charge carrier transport layer is doped.

13. The electroluminescent light-emitting device according to claim 12, characterized in that the at least one doped fullerene layer is formed in direct contact with the at least one charge carrier transport layer, the at least one charge carrier transport layer being formed of a host material different than fullerene.

14. The electroluminescent light-emitting device according to claim 1, characterized in that a vertically stacked arrangement of a plurality of organic light-emitting diodes is formed, and in that at least one transparent intermediate electrode in the vertically stacked arrangement is formed by the at least one doped fullerene layer.

15. The electroluminescent light-emitting device according to claim 12, characterized in that the at least one transparent intermediate electrode is at an electric potential that can be selected from outside.

16. The electroluminescent light-emitting device according to claim 14, characterized by a plurality of transparent intermediate electrodes which are in each case guided out of a different side of the vertically stacked arrangement of organic light-emitting diodes.

17. The electroluminescent light-emitting device according to claim 1, characterized in that the at least one doped fullerene layer is applied by means of vapor co-deposition of a fullerene with a doping substance.

18. The electroluminescent light-emitting device according to claim 1, characterized in that the at least one doped fullerene layer is formed as a current distribution layer which is designed to transport charge carriers from an electrode, optionally embodied as a cathode or as an anode, to regions of the at least one light-emitting layer which are formed so as not to overlap with the electrode.

19. The electroluminescent light-emitting device according to claim 18, characterized in that the regions of the at least one light-emitting layer which are formed so as not to overlap with the electrode are arranged at least partially below cutouts in the electrode.

20. A method for producing an electroluminescent light-emitting device, in which an arrangement of organic layers is applied to a substrate, the arrangement of organic layers being formed with at least one charge carrier transport layer consisting of organic material and at least one light-emitting layer consisting of organic material, characterized in that the arrangement of organic layers is formed with at least one doped fullerene layer which has a doping that increases the electrical conductivity.

21. The method according to claim 20, characterized in that the at least one doped fullerene layer is doped with organic molecules.

22. The method according to claim 20, characterized in that at least one metal layer is formed in direct contact with the at least one doped fullerene layer.

23. The method according to claim 22, characterized in that the at least one metal layer is structured.

24. The method according to claim 23, characterized in that the at least one metal layer is formed such that it is structured by means of a printing process.

25. The method according to claim 20, characterized in that a flat electrode is formed by the at least one doped fullerene layer.

26. The method according to claim 20, characterized in that the at least one charge carrier transport layer is formed by the at least one doped fullerene layer.

27. The method according to claim 26, characterized in that the at least one doped fullerene layer is formed as an electron transport layer.

28. The method according to claim 20, characterized in that arranged between the at least one charge carrier transport layer and the at least one light-emitting layer is a layer which has an exciton energy that is greater than an exciton energy of the at least one light-emitting layer, so that excitons from the at least one light-emitting layer are blocked by the layer.

29. The method according to claim 20, characterized in that an injection layer is formed in the arrangement of organic layers, said injection layer optionally being formed of a salt of Cs or a salt of Li, in particular LiF or CsF.

30. The method according to claim 20, characterized in that the at least one charge carrier transport layer is doped and is optionally applied in direct contact with the at least one charge carrier transport layer, the at least one charge carrier transport being formed of a host material different than fullerene.

31. The method according to claim 20, characterized in that a vertically stacked arrangement of a plurality of organic light-emitting diodes is formed, and in that at least one transparent intermediate electrode in the vertically stacked arrangement is formed by the at least one doped fullerene layer.

32. The method according to claim 31, characterized in that a plurality of transparent intermediate electrodes are formed, which are in each case guided out of a different side of the vertically stacked arrangement of organic light-emitting diodes.

33. The method according to claim 20, characterized in that the at least one doped fullerene layer is applied by means of vapor co-deposition of a fullerene with a doping substance.

34. The method according to claim 20, characterized in that the substrate when forming the at least one doped fullerene layer is maintained at a temperature of >

30°

C., preferably at a temperature of >

80°

C.