LIGHT EMITTING DEVICE PACKAGE

• US 20110186894A1
• Filed: 02/03/2011
• Published: 08/04/2011
• Est. Priority Date: 02/04/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: KIM, Sun Kyung
• Granted Patent: US 8,519,418 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a sub-mount including a cavity, a light emitting device chip provided in the cavity, an electrode electrically connected to the light emitting chip, a reflective layer formed on a surface of the cavity, a dielectric pattern on the reflective layer, and an encapsulant filled in the cavity.

Claims

1. A light emitting device package comprising:

a sub-mount including a cavity;

a light emitting device chip provided in the cavity;

an electrode electrically connected to the light emitting chip;

a reflective layer on the cavity;

a dielectric pattern on the reflective layer; and

an encapsulant in the cavity.

2. The light emitting device package of claim 1, wherein the dielectric pattern has a refractive index different from a refractive index of the encapsulant.

3. The light emitting device package of claim 1, wherein the dielectric pattern has a period in a range of 50 nm to 3,000 nm.

4. The light emitting device package of claim 1, wherein the dielectric pattern comprises at least one of oxide, nitride and fluoride.

5. The light emitting device package of claim 1, further comprising a second dielectric layer on the reflective layer, wherein the dielectric pattern is formed on the second dielectric layer.

6. The light emitting device package of claim 1, wherein the encapsulant comprises luminescence material.

7. The light emitting device package of claim 1, wherein the light emitting device chip is provided thereon with a luminescence layer having a uniform thickness.