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Semiconductor Device and Method of Forming Cavity Adjacent to Sensitive Region of Semiconductor Die Using Wafer-Level Underfill Material

  • US 20110187005A1
  • Filed: 02/03/2010
  • Published: 08/04/2011
  • Est. Priority Date: 02/03/2010
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • providing a semiconductor wafer having a plurality of first semiconductor die with a stress sensitive region;

    forming a masking layer over the stress sensitive region;

    depositing underfill material over the semiconductor wafer, the masking layer preventing formation of the underfill material adjacent to the stress sensitive region;

    removing the masking layer leaving a cavity in the underfill material adjacent to the stress sensitive region; and

    singulating the semiconductor wafer into the first semiconductor die.

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