SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME

• US 20110187688A1
• Filed: 01/27/2011
• Published: 08/04/2011
• Est. Priority Date: 01/29/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Yamazaki, Shunpei
• Granted Patent: US 9,887,450 B2
• Time in Patent Office: Days
• US Class Current: 345/208
• CPC Class Codes: G02F 1/13452 Conductors connecting driver circuitry and terminals of panels
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01Q 1/2258 used with computer equipment
• CPC Class Codes: H01Q 1/24 with receiving set
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 25/005 providing two patterns of opposite direction; back to back antennas H01Q25/004 takes precedence
• CPC Class Codes: H01Q 7/00 Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop

Abstract

A semiconductor device capable of inputting signals and power without the use of an FPC is provided. The semiconductor device includes a first substrate and a second substrate. A receiver antenna is provided on a surface side of the first substrate. The second substrate is provided with a transmitter antenna and an integrated circuit. The second substrate is attached on a back side of the first substrate. The receiver antenna and the transmitter antenna overlap with each other with the first substrate provided therebetween. Thus, the distance between the antennas can be kept constant, so that signals and power can be received highly efficiently.

Claims

1. A semiconductor device comprising:

a first substrate;

a second substrate;

a first signal antenna provided over a surface side of the first substrate; and

a second signal antenna and an integrated circuit provided over the second substrate,

wherein the second substrate is attached to a back side of the first substrate, and

wherein the first signal antenna and the second signal antenna overlap with each other with the first substrate provided therebetween.

2. The semiconductor device according to claim 1, each of the first signal antenna and the second signal antenna serves as a power antenna.

3. The semiconductor device according to claim 1, further comprising:

a first power antenna provided over the surface side of the first substrate; and

a second power antenna provided over the second substrate,

wherein the first power antenna and the second power antenna overlap with each other with the first substrate provided therebetween.

4. The semiconductor device according to claim 1, wherein each of the first substrate and the second substrate is a flexible substrate.

5. The semiconductor device according to claim 1, further comprising a pixel portion including a plurality of pixels over the first substrate, wherein each of the plurality of pixels includes a transistor and a display element.

6. The semiconductor device according to claim 5, wherein a channel formation region of the transistor includes an oxide semiconductor layer.

7. The semiconductor device according to claim 1, further comprising a scan line driver circuit, a signal line driver circuit, and a pixel portion including a plurality of pixels over the first substrate, wherein each of the plurality of pixels includes a transistor whose on/off is controlled by the scan line driver circuit, and includes a display element to which an image signal is input from the signal line driver circuit through the transistor.

8. The semiconductor device according to claim 7, wherein a channel formation region of the transistor includes an oxide semiconductor layer.

9. A semiconductor device comprising:

a first substrate;

a second substrate;

a first signal antenna provided over a surface side of the first substrate; and

a second signal antenna and an integrated circuit provided over the second substrate,

wherein the second substrate is attached to a back side of the first substrate with an adhesive, and

wherein the first signal antenna and the second signal antenna overlap with each other with the first substrate provided therebetween.

10. The semiconductor device according to claim 9, each of the first signal antenna and the second signal antenna serves as a power antenna.

11. The semiconductor device according to claim 9, further comprising:

a first power antenna provided over the surface side of the first substrate; and

a second power antenna provided over the second substrate,

wherein the first power antenna and the second power antenna overlap with each other with the first substrate provided therebetween.

12. The semiconductor device according to claim 9, wherein each of the first substrate and the second substrate is a flexible substrate.

13. The semiconductor device according to claim 9, further comprising a pixel portion including a plurality of pixels over the first substrate, wherein each of the plurality of pixels includes a transistor and a display element.

14. The semiconductor device according to claim 13, wherein a channel formation region of the transistor includes an oxide semiconductor layer.

15. The semiconductor device according to claim 9, further comprising a scan line driver circuit, a signal line driver circuit, and a pixel portion including a plurality of pixels over the first substrate, wherein each of the plurality of pixels includes a transistor whose on/off is controlled by the scan line driver circuit, and includes a display element to which an image signal is input from the signal line driver circuit through the transistor.

16. The semiconductor device according to claim 15, wherein a channel formation region of the transistor includes an oxide semiconductor layer.

17. A semiconductor device comprising:

a first substrate;

a second substrate;

a first signal antenna provided over a surface side of the first substrate; and

a second signal antenna and an integrated circuit provided over the second substrate,

wherein the second substrate is attached to a back side of the first substrate with an adhesive,

wherein an insulating filler is mixed into the adhesive, and

wherein the first signal antenna and the second signal antenna overlap with each other with the first substrate provided therebetween.

18. The semiconductor device according to claim 17, each of the first signal antenna and the second signal antenna serves as a power antenna.

19. The semiconductor device according to claim 17, further comprising:

a first power antenna provided over the surface side of the first substrate; and

a second power antenna provided over the second substrate,

wherein the first power antenna and the second power antenna overlap with each other with the first substrate provided therebetween.

20. The semiconductor device according to claim 17, wherein each of the first substrate and the second substrate is a flexible substrate.

21. The semiconductor device according to claim 17, further comprising a pixel portion including a plurality of pixels over the first substrate, wherein each of the plurality of pixels includes a transistor and a display element.

22. The semiconductor device according to claim 21, wherein a channel formation region of the transistor includes an oxide semiconductor layer.

23. The semiconductor device according to claim 17, further comprising a scan line driver circuit, a signal line driver circuit, and a pixel portion including a plurality of pixels over the first substrate, wherein each of the plurality of pixels includes a transistor whose on/off is controlled by the scan line driver circuit, and includes a display element to which an image signal is input from the signal line driver circuit through the transistor.

24. The semiconductor device according to claim 23, wherein a channel formation region of the transistor includes an oxide semiconductor layer.