High Injection Efficiency Polar and Non-Polar III-Nitrides Light Emitters
First Claim
1. A solid state light emitting device fabricated using III-nitride alloy materials on either polar, semi-polar or non-polar crystal orientation and comprised of multiple layers grouped into a P-doped waveguide layer, an active multiple quantum well region, an electron blocking layer and an N-doped waveguide region, the multiple active quantum well region being further comprised of multiple layers to form multiple quantum wells and barrier layers, the band-gaps associated with the N-doped waveguide region and the barrier layers being realized through the incorporation of indium and/or aluminum in said layers.
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Abstract
Injection efficiency in both polar and non-polar III-nitride light-emitting structures is strongly deteriorated by inhomogeneous population of different quantum wells (QWs) in multiple QW (MQW) active region of the emitter. Inhomogeneous QW population becomes stronger in long-wavelength emitters with deeper active QWs. In both polar and non-polar structures, indium and/or aluminum incorporation into optical waveguide layers and/or barrier layers of the active region, depending on the desired wavelength of the light to be emitted, improves the uniformity of QW population and increases the structure injection efficiency.
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Citations
14 Claims
- 1. A solid state light emitting device fabricated using III-nitride alloy materials on either polar, semi-polar or non-polar crystal orientation and comprised of multiple layers grouped into a P-doped waveguide layer, an active multiple quantum well region, an electron blocking layer and an N-doped waveguide region, the multiple active quantum well region being further comprised of multiple layers to form multiple quantum wells and barrier layers, the band-gaps associated with the N-doped waveguide region and the barrier layers being realized through the incorporation of indium and/or aluminum in said layers.
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