FORMED ARTICLE, METHOD FOR PRODUCING THE SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE

• US 20110189450A1
• Filed: 08/18/2009
• Published: 08/04/2011
• Est. Priority Date: 08/19/2008
• Status: Active Grant

• Current Assignee: Lintec Corporation
• Original Assignee: Lintec Corporation
• Inventors: Suzuki, Yuuta, Hoshi, Shinichi, Kondo, Takeshi
• Granted Patent: US 9,340,869 B2
• Time in Patent Office: Days
• US Class Current: 428/215
• CPC Class Codes: B05D 1/62 Plasma-deposition of organic layers plasma deposition in general C23C14/00, C23C16/00
• CPC Class Codes: B05D 3/00 Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials successively applying liquids or other fluent materials B05D1/36; drying ovens F26B
• CPC Class Codes: B32B 7/00 Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
• CPC Class Codes: C23C 14/00 Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: C23C 14/562 for coating elongated substrates
• CPC Class Codes: Y10T 428/24967 Absolute thicknesses specified
• CPC Class Codes: Y10T 428/31663 As siloxane, silicone or silane

Abstract

A formed article includes a gas barrier layer that is formed of a material that includes at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer having an oxygen atom content that gradually decreases from the surface of the gas barrier layer in the depth direction, and having a carbon atom content that gradually increases from the surface of the gas barrier layer in the depth direction. An electronic device member includes the formed article, and an electronic device includes the electronic device member. The formed article exhibits an excellent gas barrier capability and excellent transparency.

Claims

1. A formed article comprising a gas barrier layer that is formed of a material that includes at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer having an oxygen atom content that gradually decreases from the surface of the gas barrier layer in the depth direction, and having a carbon atom content that gradually increases from the surface of the gas barrier layer in the depth direction.

2. The formed article according to claim 1, wherein the surface layer part of the gas barrier layer has an oxygen atom content of 10 to 70%, a carbon atom content of 10 to 70%, and a silicon atom content of 5 to 35%, based on the total content of oxygen atoms, carbon atoms, and silicon atoms.

3. The formed article according to claim 1, wherein the surface layer part of the gas battier layer has a peak position of binding energy of 2p electron of the silicon determined by X-ray photoelectron spectroscopy (XPS) of 102 to 104 eV.

4. The formed article according to claim 1, comprising a polyorganosiloxane compound.

5. The formed article according to claim 4, wherein the polyorganosiloxane compound is a polyorganosiloxane shown by the following formula (a) or (b),

6. The formed article according to claim 1, wherein the gas barrier layer is formed in the surface area of a polyorganosiloxane compound-containing layer having a thickness of 30 nm to 200 μ

m, and has a depth of 5 to 100 nm.

7. The formed article according to claim 1, wherein the gas barrier layer has been obtained by implanting ions into a polyorganosiloxane compound-containing layer.

8. The formed article according to claim 7, wherein the ions have been implanted into the surface layer part of the polyorganosiloxane compound-containing layer.

9. The formed article according to claim 7, wherein the ions have been obtained by ionizing at least one gas selected from the group consisting of hydrogen, nitrogen, oxygen, rare gas, and fluorocarbons.

10. The formed article according to claim 7, wherein the ions have been implanted by plasma ion implantation.

11. A method of producing the formed article according to claim 1, the method comprising implanting ions into a polyorganosiloxane compound-containing layer of a formed body that includes the polyorganosiloxane compound-containing layer in its surface area.

12. The method according to claim 11, wherein the ions are obtained by ionizing at least one gas selected from the group consisting of hydrogen, nitrogen, oxygen, rare gas, and fluorocarbons.

13. The method according to claim 11, wherein the ions are implanted by plasma ion implantation.

14. The method according to claim 11, wherein the ions are implanted into the polyorganosiloxane compound-containing layer while transferring a long formed body that includes the polyorganosiloxane compound-containing layer in its surface area in a given direction.

15. An electronic device member comprising the formed article according to claim 1.

16. An electronic device comprising the electronic device member according to claim 15.

17. The formed article according to claim 2, wherein the surface layer part of the gas barrier layer has a peak position of binding energy of 2p electron of the silicon atom determined by X-ray photoelectron spectroscopy (XPS) of 102 to 104 eV.