METHOD OF FORMING NITRIDE FILM AND NITRIDE STRUCTURE

• US 20110189457A1
• Filed: 04/14/2011
• Published: 08/04/2011
• Est. Priority Date: 04/27/2006
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: YOO, Jaeun, KOIKE, Masayoshi, AHN, Hyung Soo, YANG, Min
• Application Number:
  US13/087,131
• Publication Number:
  US 20110189457A1
• Time in Patent Office: Days
• US Class Current: 428/220
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02543 Phosphides
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.

Claims

1-13. -13. (canceled)

14. A nitride structure formed of a group III nitride film having a thickness of more than 5 μ

m, in which concentration of certain conductive type impurities is uniform in the direction of thickness and 10¹⁶ to 10²⁰/cm³.

15. The nitride structure of claim 14, wherein the group III nitride film has a thickness of more than 50 μ

m.

16. The nitride structure of claim 15, wherein the impurities comprise Te and the group III nitride film is an n type nitride.

17. The nitride structure of claim 16, wherein the group III nitride film has a conductivity of more than 4×

10² (Ω

cm)<sup>−

1</sup>.

18. The nitride structure of claim 17, wherein the impurities comprise Te and concentration of the Te is 2×

10¹⁸ to 10²⁰/cm³.

19. The nitride structure of claim 14, wherein the group III nitride film is Al_1-x-yGa_xIn_yN (0≦

x≦

1, 0≦

y≦

1).