Zirconium and Hafnium Boride Alloy Templates on Silicon for Nitride Integration Applications
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Abstract
Semiconductor structures are provided comprising a substrate and a epitaxial layer formed over the substrate, wherein the epitaxial layer comprises B; and one or more element selected from the group consisting of Zr, Hf and Al and has a thickness greater than 50 nm. Further, methods for integrating Group III nitrides onto a substrate comprising, forming an epitaxial buffer layer of a diboride of Zr, Hf, Al, or mixtures thereof, over a substrate; and forming a Group III nitride layer over the buffer layer, are provided which serve to thermally decouple the buffer layer from the underlying substrate, thereby greatly reducing the strain induced in the semiconductor structures upon fabrication and/or operation.
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Citations
34 Claims
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1-14. -14. (canceled)
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15. A method for forming an epitaxial buffer layer over a substrate comprising, contacting a substrate with a precursor gas at a temperature and a pressure suitable for depositing an epitaxial buffer layer over the substrate, the epitaxial buffer layer having a thickness of greater than about 50 nm, wherein
the precursor gas comprises hydrogen and about 0.1-5 v/v % of a precursor source, wherein the precursor source comprises Zr(BH4)4, Hf(BH4)4, an Al source, or mixtures thereof.
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24. A method for integrating Group III nitrides onto a substrate comprising,
forming a buffer layer of a diboride of Zr, Hf, Al, or mixtures thereof, having a thickness greater than about 50 nm over a substrate; - and
forming a Group III nitride layer over the buffer layer. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32)
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33. A method for tuning the reflectivity of a buffer layer comprising, forming a buffer layer of an alloy of the formula HfxZr1-xB2 having a thickness greater than about 50 nm and a reflectivity over a substrate, wherein x is a predetermined value from 0 to 1, and wherein the reflectivity of the buffer layer is greater than a layer of ZrB2 having an identical thickness as the buffer layer.
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34. A method for tuning the lattice constant of a buffer layer comprising, forming a buffer layer of an alloy of the formula HfxZr1-xB2 having a thickness greater than about 50 nm, and
forming an active layer over the buffer layer, wherein x is a predetermined value from 0 to 1, and wherein the active layer is lattice matched to the buffer layer,
Specification