TABLE FOR PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS
First Claim
1. A table for a plasma processing apparatus, used for supporting a substrate to be processed thereon, the table comprising:
- an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both of plasma generation and drawing ions;
a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and
an electrode film of an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer.
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Accused Products
Abstract
An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled.
9 Citations
15 Claims
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1. A table for a plasma processing apparatus, used for supporting a substrate to be processed thereon, the table comprising:
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an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both of plasma generation and drawing ions; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film of an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. - View Dependent Claims (2, 3, 4, 12)
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5-11. -11. (canceled)
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13. (canceled)
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14. A plasma processing apparatus comprising:
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a processing vessel adapted to provide a plasma process to a substrate to be processed; a processing gas introducing unit for introducing a processing gas into the processing vessel; a table for the plasma processing apparatus, provided in the processing vessel; an upper electrode provided above the table such that it faces the table; and a means configured to evacuate the interior of the processing vessel, wherein the table includes; an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both of plasma generation and drawing irons; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film of an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer.
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15-16. -16. (canceled)
Specification