ATOMIC LAYER ETCHING APPARATUS AND ETCHING METHOD USING THE SAME
First Claim
1. An atomic layer etching apparatus comprising:
- a reaction chamber including a stage on which a substrate to be etched is seated;
a plasma generator including a plasma chamber configured to supply reactive radicals and neutral beams into the reaction chamber and receive a source gas to generate plasma, an inductive coil configured to surround the exterior of the plasma chamber to generate an electric field, a grid assembly disposed at a lower part of the plasma chamber and including first, second and third grids for extracting ion beams, and a reflective body disposed under the grid assembly and configured to supply electrons to the ion beams to convert the ion beams into neutral beams;
a shutter installed between the plasma generator and the reactive chamber and configured to adjust supply of the neutral beams into the reaction chamber;
a purge gas supply part configured to supply a purge gas into the reaction chamber; and
a controller configured to control supply of the source gas, an etching gas and the purge gas, and opening/closing of the shutter.
1 Assignment
0 Petitions
Accused Products
Abstract
An atomic layer etching apparatus using reactive radicals and neutral beams and an etching method using the same are provided. The atomic layer etching apparatus includes a reaction chamber including a stage on which a substrate to be etched is seated, a plasma generator including a plasma chamber configured to supply reactive radicals and neutral beams into the reaction chamber and receive a source gas to generate plasma, an inductive coil configured to surround the exterior of the plasma chamber to generate an electric field, a grid assembly disposed at a lower part of the plasma chamber and including first, second and third grids for extracting ion beams, and a reflective body disposed under the grid assembly and configured to supply electrons to the ion beams to convert the ion beams into neutral beams, a shutter installed between the plasma generator and the reactive chamber and configured to adjust supply of the neutral beams into the reaction chamber, a purge gas supply part configured to supply a purge gas into the reaction chamber, and a controller configured to control supply of the source gas, an etching gas and the purge gas, and opening/closing of the shutter.
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Citations
9 Claims
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1. An atomic layer etching apparatus comprising:
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a reaction chamber including a stage on which a substrate to be etched is seated; a plasma generator including a plasma chamber configured to supply reactive radicals and neutral beams into the reaction chamber and receive a source gas to generate plasma, an inductive coil configured to surround the exterior of the plasma chamber to generate an electric field, a grid assembly disposed at a lower part of the plasma chamber and including first, second and third grids for extracting ion beams, and a reflective body disposed under the grid assembly and configured to supply electrons to the ion beams to convert the ion beams into neutral beams; a shutter installed between the plasma generator and the reactive chamber and configured to adjust supply of the neutral beams into the reaction chamber; a purge gas supply part configured to supply a purge gas into the reaction chamber; and a controller configured to control supply of the source gas, an etching gas and the purge gas, and opening/closing of the shutter. - View Dependent Claims (2)
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3. An etching method using an atomic layer etching apparatus, the method comprising:
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loading a substrate, in which a layer to be etched is exposed, on a stage in a reaction chamber; reactively supplying radicals generated from a plasma generator disposed at an upper part of the reaction chamber into the reaction chamber to adsorb the radicals to a surface of the exposed layer; supplying a purge gas through a purge gas supply part installed at one side of the reaction chamber, and removing excessive radicals remaining after the adsorption; irradiating neutral beams generated from the plasma generator to the layer to which the radicals are adsorbed, and removing a surface material of the layer with the radicals; and supplying a purge gas and removing etching byproducts generated by irradiation of the neutral beams. - View Dependent Claims (4, 5, 6, 7, 8, 9)
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Specification