ADJUSTABLE SHADOW MASK ASSEMBLY FOR USE IN SOLAR CELL FABRICATIONS
First Claim
1. An adjustable shadow mask implantation system comprising:
- an ion source configured to provide ions; and
an shadow mask assembly configured to selectively allow ions from the ion source to pass therethrough to a substrate where they are implanted, wherein the shadow mask assembly is configured to adjust between a first position and a second position,wherein the shadow mask assembly enables ion implantation of multiple substantially parallel lines absent any lines with an intersecting orientation with respect to the multiple substantially parallel lines when set in the first position, andwherein the shadow mask assembly enables ion implantation of multiple substantially parallel lines and a line with an intersecting orientation with respect to the multiple substantially parallel lines when set in the second position.
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Accused Products
Abstract
An adjustable shadow mask implantation system comprising: an ion source configured to provide ions; and an shadow mask assembly configured to selectively allow ions from the ion source to pass therethrough to a substrate where they are implanted, wherein the shadow mask assembly is configured to adjust between a first position and a second position, wherein the shadow mask assembly enables ion implantation of multiple substantially parallel lines absent any lines with an intersecting orientation with respect to the multiple substantially parallel lines when set in the first position, and wherein the shadow mask assembly enables ion implantation of multiple substantially parallel lines and a line with an intersecting orientation with respect to the multiple substantially parallel lines when set in the second position.
145 Citations
36 Claims
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1. An adjustable shadow mask implantation system comprising:
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an ion source configured to provide ions; and an shadow mask assembly configured to selectively allow ions from the ion source to pass therethrough to a substrate where they are implanted, wherein the shadow mask assembly is configured to adjust between a first position and a second position, wherein the shadow mask assembly enables ion implantation of multiple substantially parallel lines absent any lines with an intersecting orientation with respect to the multiple substantially parallel lines when set in the first position, and wherein the shadow mask assembly enables ion implantation of multiple substantially parallel lines and a line with an intersecting orientation with respect to the multiple substantially parallel lines when set in the second position. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of ion implantation comprising:
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flowing ions through a shadow mask assembly to a substrate; adjusting the shadow mask assembly to a first position, wherein the substrate is selectively implanted with multiple substantially parallel lines of ions absent any lines of ions with an intersecting orientation with respect to the multiple substantially parallel lines; and adjusting the shadow mask assembly to a second position, wherein the substrate is selectively implanted with multiple substantially parallel lines of ions and a line of ions with an intersecting orientation with respect to the multiple substantially parallel lines. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A shadow mask implantation system comprising:
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an ion source configured to provide ions; a first occlusion mask having a first set of elongated openings substantially parallel to a first axis; and a second occlusion mask having a second set of elongated openings substantially parallel to the first axis, wherein the first occlusion mask and the second occlusion mask are configured such that the first set of elongated openings overlap with, but are offset from, the second set of elongated openings to form a resulting set of elongated openings through which ions from the ion source are selectively allowed to pass therethrough to a substrate where they are implanted, each elongated opening of the resulting set being smaller than each elongated opening of the first and second sets. - View Dependent Claims (26, 27, 28, 29, 30)
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31. A method of ion implantation comprising:
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flowing ions through a shadow mask assembly to a substrate, wherein the shadow mask assembly comprises a first occlusion mask having a first set of elongated openings substantially parallel to a first axis and a second occlusion mask having a second set of elongated openings substantially parallel to the first axis, wherein the first occlusion mask and the second occlusion mask are configured such that the first set of elongated openings overlap with, but are offset from, the second set of elongated openings to form a resulting set of elongated openings through which ions from the ion source are selectively allowed to pass therethrough to the substrate, each elongated opening of the resulting set being smaller than each elongated opening of the first and second sets; and implanting the ions into the substrate, thereby forming multiple substantially parallel lines of ion implantations corresponding to the resulting set of elongated openings. - View Dependent Claims (32, 33, 34, 35, 36)
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Specification