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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20110193077A1
  • Filed: 01/26/2011
  • Published: 08/11/2011
  • Est. Priority Date: 02/05/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a bottom-gate transistor including a gate electrode layer, a gate insulating layer, and an oxide semiconductor layer over a flexible substrate;

    an insulating layer over the bottom-gate transistor; and

    a conductive layer over the insulating layer,wherein the insulating layer is provided so as to cover the oxide semiconductor layer and be in contact with the gate insulating layer, andwherein in a direction of a channel width of the oxide semiconductor layer, the conductive layer is provided so as to cover a channel formation region of the oxide semiconductor layer and the end portion of the insulating layer and be in contact with the gate electrode layer.

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