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FIELD EFFECT TRANSISTOR

  • US 20110193078A1
  • Filed: 01/26/2011
  • Published: 08/11/2011
  • Est. Priority Date: 02/10/2010
  • Status: Active Grant
First Claim
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1. A field effect transistor comprising:

  • a semiconductor layer including a first surface and a second surface opposed to the first surface;

    a first conductor electrode in contact with the first surface of the semiconductor layer;

    a second conductor electrode in contact with the first surface of the semiconductor layer;

    a gate provided over the second surface of the semiconductor layer; and

    a third conductor electrode in contact with the first surface of the semiconductor layer and between the first conductor electrode and the second conductor electrode so as to cross the semiconductor layer.

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