Semiconductor device and electronic appliance

• US 20110193080A1
• Filed: 01/26/2011
• Published: 08/11/2011
• Est. Priority Date: 02/05/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: GODO, Hiromichi, YAMAZAKI, Shunpei, SUZAWA, Hideomi, SASAGAWA, Shinya, KURATA, Motomu, MIKAMI, Mayumi
• Granted Patent: US 8,436,403 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: Y10T 428/24421 Silicon containing

Abstract

One object is to provide a semiconductor device that includes an oxide semiconductor and is reduced in size with favorable characteristics maintained. The semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode. The source electrode or the drain electrode includes a first conductive layer and a second conductive layer having a region extended in a channel length direction from an end face of the first conductive layer. The sidewall insulating layer has a length of a bottom surface in the channel length direction smaller than a length in the channel length direction of the extended region of the second conductive layer and is provided over the extended region.

Claims

1. A semiconductor device comprising:

an oxide semiconductor layer;

a source electrode and a drain electrode in contact with the oxide semiconductor layer;

a gate electrode overlapping with the oxide semiconductor layer; and

a gate insulating layer between the oxide semiconductor layer and the gate electrode,

wherein the source electrode or the drain electrode includes a first conductive layer and a second conductive layer having a region extended in a channel length direction from an end face of the first conductive layer; and

wherein a sidewall insulating layer having a length in the channel length direction of a bottom surface of the sidewall insulating layer smaller than a length in the channel length direction of the extended region of the second conductive layer is provided over the extended region.

2. A semiconductor device according to claim 1, wherein a cross-sectional shape of the first conductive layer and the second conductive layer has a tapered shape.

3. A semiconductor device according to claim 1, wherein the second conductive layer comprises a metal nitride.

4. A semiconductor device according to claim 1, wherein a thickness of the second conductive layer is equal to or greater than 5 nm and equal to or less than 15 nm.

5. A semiconductor device according to claim 1,

wherein the source electrode or the drain electrode is in contact with the oxide semiconductor layer at an end face of the source electrode or the drain electrode, and

wherein an insulating layer is provided between the source electrode or the drain electrode and the oxide semiconductor layer.

6. An electronic appliance having the semiconductor device according to claim 1, wherein the electronic appliance is selected from the group consisting of a television set, a mobile phone, a personal digital assistant, a digital camera, a notebook personal computer, and an e-book reader.

7. A semiconductor device comprising:

a plurality of first conductive layers over a substrate;

a sidewall insulating layer and a second conductive layer over each of the first conductive layers;

an insulating layer over the second conductive layer;

an oxide semiconductor layer over the sidewall insulating layer and the insulating layer,

a gate insulating layer over the oxide semiconductor layer; and

a gate electrode over the gate insulating layer,

wherein an edge portion of each of the first conductive layers is covered with the oxide semiconductor layer and a part of the oxide semiconductor layer is interposed between the plurality of first conductive layers, and

wherein the gate electrode overlaps the second conductive layer and each of the first conductive layers.

8. A semiconductor device according to claim 7, wherein a cross-sectional shape of one of the first conductive layers and the second conductive layer has a tapered shape.

9. A semiconductor device according to claim 7, wherein each of the first conductive layers comprises a metal nitride.

10. A semiconductor device, according to claim 7, wherein a thickness of each of the first conductive layers is equal to or greater than 5 nm and equal to or less than 15 nm.

11. A semiconductor device according to claim 7,

wherein each of the first conductive layers is in contact with the oxide semiconductor layer at an end face of each of the first conductive layers, and

wherein the insulating layer is provided between one of the first conductive layers and the oxide semiconductor layer.

12. An electronic appliance having the semiconductor device according to claim 7, wherein the electronic appliance is selected from the group consisting of a television set, a mobile phone, a personal digital assistant, a digital camera, a notebook personal computer, and an e-book reader.

13. A semiconductor device comprising:

a plurality of first conductive layers over a substrate;

a sidewall insulating layer and a second conductive layer over each of the first conductive layers;

an insulating layer over the second conductive layer;

an oxide semiconductor layer over the sidewall insulating layer and the insulating layer,

a gate insulating layer over the oxide semiconductor layer; and

a gate electrode over the gate insulating layer,

wherein an edge portion of each of the first conductive layers is covered with the oxide semiconductor layer and a part of the oxide semiconductor layer is interposed between the plurality of first conductive layers, and

wherein the gate electrode overlaps the second conductive layer and each of the first conductive layers,

wherein a first side surface of the sidewall insulating layer is in contact with the oxide semiconductor layer, and

wherein a second side surface of the sidewall insulating layer is in contact with the insulating layer.

14. A semiconductor device according to claim 13, wherein a cross-sectional shape of one of the first conductive layers and the second conductive layer has a tapered shape.

15. A semiconductor device according to claim 13, wherein each of the first conductive layers comprises a metal nitride.

16. A semiconductor device according to claim 13, wherein a thickness of each of the first conductive layers is equal to or greater than 5 nm and equal to or less than 15 nm.

17. A semiconductor device according to claim 13,

wherein one of the first conductive layers is in contact with a bottom surface of the sidewall insulating layer.

18. An electronic appliance having the semiconductor device according to claim 13, wherein the electronic appliance is selected from the group consisting of a television set, a mobile phone, a personal digital assistant, a digital camera, a notebook personal computer, and an e-book reader.