FIELD EFFECT TRANISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, AND MANUFACTURING METHOD OF AMORPHOUS OXIDE FILM

• US 20110193082A1
• Filed: 04/19/2011
• Published: 08/11/2011
• Est. Priority Date: 09/06/2005
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: IWASAKI, Tatsuya
• Granted Patent: US 8,154,024 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.

Claims

1-9. -9. (canceled)

10. A field effect transistor having a channel layer of an amorphous oxide film comprising at least one material selected from a Ga—

In—

Zn oxide, a Sn—

In—

Zn oxide, an In—

Zn—

Ga—

Mg oxide, an In—

Sn oxide, an In—

Ga oxide, and an In—

Zn oxide,

wherein the amorphous oxide film shows an electron carrier concentration in the range of 10¹⁴ to 10¹⁸/cm³, and

wherein the amorphous oxide film contains hydrogen atoms at a concentration in the range of 10¹⁶ to 10²⁰/cm³.