PIXEL STRUCTURE, METHOD OF FABRICATING THE SAME, AND METHOD OF FABRICATING ELECTRONIC DEVICE

• US 20110193089A1
• Filed: 04/01/2010
• Published: 08/11/2011
• Est. Priority Date: 02/10/2010
• Status: Abandoned Application

• Current Assignee: AU Optronics Corporation
• Original Assignee: AU Optronics Corporation
• Inventors: Lu, Hsueh-Hsing, Shih, Tsung-Hsiang, Ting, Hung-Che, Chou, Cheng-Wei, Chen, Chia-Yu
• Application Number:
  US12/753,098
• Publication Number:
  US 20110193089A1
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A pixel structure including a substrate, a gate, an insulation layer, a metal oxide semiconductor (MOS) layer, a source and a drain, at least one film layer, and a first electrode layer is provided. The gate is disposed on the substrate. The insulation layer covers the gate. The MOS layer is disposed on the insulation layer above the gate. The source and the drain are disposed on the MOS layer. The film layer covers the MOS layer and includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks ultraviolet light from reaching the MOS layer. The first electrode layer is electrically connected to the source or the drain.

Claims

1. A pixel structure, comprising:

a substrate;

a gate, disposed on the substrate;

an insulation layer, covering the gate;

a metal oxide semiconductor (MOS) layer, disposed on the insulation layer above the gate;

a source and a drain, disposed on the MOS layer;

at least one film layer, covering the MOS layer, wherein the film layer comprises a photocatalytic material, and the photocatalytic material blocks a ultraviolet light from reaching the MOS layer; and

a first electrode layer, electrically connected to the source or the drain.

2. The pixel structure according to claim 1, wherein the film layer comprises a first passivation layer, the first passivation layer covers the source and the drain, the first electrode layer is disposed on the first passivation layer, and the first passivation layer comprises the photocatalytic material.

3. The pixel structure according to claim 1, wherein the film layer comprises:

a first passivation layer, covering the source and the drain; and

a second passivation layer, disposed on the first passivation layer, and exposing the first electrode layer,

wherein at least one of the first passivation layer and the second passivation layer comprises the photocatalytic material.

4. The pixel structure according to claim 1, wherein the film layer comprises:

an etch stop layer, disposed on a surface of the MOS layer;

a first passivation layer, covering the source and the drain and the etch stop layer; and

a second passivation layer, disposed on the first passivation layer, and exposing the first electrode layer,

wherein at least one of the etch stop layer, the first passivation layer, and the second passivation layer comprises the photocatalytic material.

5. The pixel structure according to claim 1, wherein the photocatalytic material comprises insulating metal oxide or metal oxide nanoparticles.

6. The pixel structure according to claim 5, wherein the insulating metal oxide comprises one or a combination of TiOx, TiSiOx, ZnOx, SnOx, ZrOx, CdS, and ZnS.

7. The pixel structure according to claim 5, wherein the metal oxide nanoparticles comprises one or a combination of TiOx nanoparticles, TiSiOx nanoparticles, ZnOx nanoparticles, SnOx nanoparticles, ZrOx nanoparticles, CdS nanoparticles, and ZnS nanoparticles.

8. The pixel structure according to claim 1 further comprising;

a light-emitting material layer, disposed on the first electrode layer; and

a second electrode layer, disposed on the light-emitting material layer.

9. The pixel structure according to claim 1, wherein the photocatalytic material blocks light with a wavelength of about 170 to about 350 nm.

10. A method of fabricating a pixel structure, comprising:

forming a gate on a substrate;

forming an insulation layer on the gate;

forming a MOS layer on the insulation layer above the gate;

forming a source and a drain on the MOS layer;

forming at least one film layer on the source and the drain, and covering the MOS layer, wherein the film layer comprises a photocatalytic material, and the photocatalytic material blocks an ultraviolet light from reaching the MOS layer; and

forming a first electrode layer, electrically connected to the source or the drain.

11. The fabricating method according to claim 10, wherein the photocatalytic material blocks light with a wavelength of about 170 to about 350 nm.

12. The fabricating method according to claim 10 further comprising performing an ultraviolet cleaning procedure on a surface of the first electrode layer.

13. The fabricating method according to claim 12, wherein the ultraviolet cleaning procedure comprises supplying ozone and irradiating with an ultraviolet light, and a wavelength of the ultraviolet light is about 172 nm.

14. The fabricating method according to claim 10, wherein the step of forming the film layer comprises:

forming a first passivation layer on the source and the drain, and covering the MOS layer, wherein the first passivation layer comprises the photocatalytic material; and

patterning the first passivation layer to form a contact window opening in the first passivation layer to expose the source or the drain, wherein the first electrode layer is filled in the contact window opening to be electrically connected to the source or the drain.

15. The fabricating method according to claim 10, wherein the step of forming the film layer comprises:

forming a first passivation layer on the source and the drain, and covering the MOS layer;

patterning the first passivation layer to form a contact window opening in the first passivation layer to expose the source or the drain, wherein the first electrode layer is filled in the contact window opening to be electrically connected to the source or the drain;

forming a second passivation layer on the first passivation layer, and covering the first electrode layer; and

patterning the second passivation layer to expose the first electrode layer,

wherein at least one of the first passivation layer and the second passivation layer comprises the photocatalytic material.

16. The fabricating method according to claim 10, wherein the step of forming the film layer comprises:

forming an etch stop layer on a surface of the MOS layer;

forming a first passivation layer on the source and the drain, and covering the MOS layer;

patterning the first passivation layer to form a contact window opening in the first passivation layer to expose the source or the drain, wherein the first electrode layer is filled in the contact window opening to be electrically connected to the source or the drain;

forming a second passivation layer on the first passivation layer, and covering the first electrode layer; and

patterning the second passivation layer to expose the first electrode layer,

wherein at least one of the etch stop layer, the first passivation layer, and the second passivation layer comprises the photocatalytic material.

17. The fabricating method according to claim 10, wherein the photocatalytic material comprises insulating metal oxide or metal oxide nanoparticles.

18. The fabricating method according to claim 17, wherein the insulating metal oxide comprises one or a combination of TiOx, TiSiOx, ZnOx, SnOx, ZrOx, CdS, and ZnS.

19. The fabricating method according to claim 17, wherein the metal oxide nanoparticles comprises one or a combination of TiOx nanoparticles, TiSiOx nanoparticles, ZnOx nanoparticles, SnOx nanoparticles, ZrOx nanoparticles, CdS nanoparticles, and ZnS nanoparticles.

20. The fabricating method according to claim 10 further comprising:

forming a light-emitting material layer on the first electrode layer; and

forming a second electrode layer on the light-emitting material layer.

21. A method of fabricating an electronic device, comprising:

forming a plurality of pixel structures on a substrate, wherein each of the pixel structures is fabricated through the fabricating method in claim 10;

forming a sealant on a surface of the substrate;

forming a cover on the substrate, wherein the cover shelters the pixel structures and is in contact with the sealant; and

performing an ultraviolet curing procedure to cure the sealant.

22. The fabricating method according to claim 21, wherein a wavelength of an ultraviolet light used in the ultraviolet curing procedure is about 313 nm.