Devices, Structures, and Methods Using Self-Aligned Resistive Source Extensions
First Claim
Patent Images
1. A field-effect-gated bipolar active device, comprising:
- a source region having a first conductivity type;
a body region having a second conductivity type, and surrounding said source region;
a gate which is capacitively coupled to said body region, to thereby create a channel portion therein which allows passage of majority carriers from said source region;
a source extension region which connects said source region to said channel, and is more resistive than said source region;
a drift/drain region which has said first conductivity type, and which is interposed between said body region and a second-conductivity-type collector region;
wherein said source extension region is generated by a dielectric layer which contains immobile electrostatic charge.
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Abstract
Devices, structures, and related methods for IGBTs and the like which include a self-aligned series resistance at the source-body junction to avoid latchup. The series resistance is achieved by using a charged dielectric, and/or by using a dielectric which provides a source of dopant atoms of the same conductivity type as the source region, at a sidewall adjacent to the source region.
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Citations
30 Claims
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1. A field-effect-gated bipolar active device, comprising:
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a source region having a first conductivity type; a body region having a second conductivity type, and surrounding said source region; a gate which is capacitively coupled to said body region, to thereby create a channel portion therein which allows passage of majority carriers from said source region; a source extension region which connects said source region to said channel, and is more resistive than said source region; a drift/drain region which has said first conductivity type, and which is interposed between said body region and a second-conductivity-type collector region; wherein said source extension region is generated by a dielectric layer which contains immobile electrostatic charge. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device structure, comprising:
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a source region having a first conductivity type; a body region having a second conductivity type, and surrounding said source region; a gate which is capacitively coupled to said body region, to thereby create a channel portion therein which allows passage of majority carriers from said source region; a source extension region which connects said source region to said channel, and is more resistive than said source region; a drift/drain region having said first conductivity type, and interposed between said body region and a second-conductivity-type collector region; a first metallization layer connected to said source region and to a second-conductivity-type emitter region which is connected to said body region; and a second metallization layer which is connected to said collector region; wherein said source extension region is generated by a dielectric layer which contains immobile electrostatic charge. - View Dependent Claims (13, 14, 19, 21, 22)
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15-18. -18. (canceled)
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20. (canceled)
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23. A field-effect-gated bipolar active device, comprising:
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a source region having a first conductivity type; a body region having a second conductivity type, and surrounding said source region; a gate which is capacitively coupled to said body region, to thereby create a channel portion therein which allows passage of majority carriers from said source region; a source extension region which connects said source region to said channel, and has said first conductivity type, and is more resistive than said source region; a drift/drain region which has said first conductivity type, and which is interposed between said body region and a second-conductivity-type collector region; wherein said source extension region lies under a dielectric layer which contains dopant atoms which predominantly correspond to said first conductivity type. - View Dependent Claims (24, 29)
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25-28. -28. (canceled)
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30-82. -82. (canceled)
Specification