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Devices, Structures, and Methods Using Self-Aligned Resistive Source Extensions

  • US 20110193131A1
  • Filed: 09/21/2010
  • Published: 08/11/2011
  • Est. Priority Date: 09/21/2009
  • Status: Active Grant
First Claim
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1. A field-effect-gated bipolar active device, comprising:

  • a source region having a first conductivity type;

    a body region having a second conductivity type, and surrounding said source region;

    a gate which is capacitively coupled to said body region, to thereby create a channel portion therein which allows passage of majority carriers from said source region;

    a source extension region which connects said source region to said channel, and is more resistive than said source region;

    a drift/drain region which has said first conductivity type, and which is interposed between said body region and a second-conductivity-type collector region;

    wherein said source extension region is generated by a dielectric layer which contains immobile electrostatic charge.

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