Electronic component for high temperatures

• US 20110193140A1
• Filed: 02/01/2011
• Published: 08/11/2011
• Est. Priority Date: 02/04/2010
• Status: Active Grant

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Widenmeyer, Markus, Fix, Richard
• Granted Patent: US 9,080,967 B2
• Time in Patent Office: Days
• US Class Current: 257/253
• CPC Class Codes: G01N 27/414 Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Abstract

A chemically sensitive field effect transistor includes a substrate, a conductor track structure situated on the substrate, and a functional layer which is contacted via the conductor track structure. To be able to form a thin, oxidation-stable and temperature-stable conductor track structure, the conductor track structure is made of a metal mixture which includes platinum and one or more metals selected from the group made up of rhodium, iridium, ruthenium, palladium, osmium, gold, scandium, yttrium, lanthanum, the lanthanides, titanium, zirconium, hafnium, niobium, tantalum, chromium, tungsten, rhenium, iron, cobalt, nickel, copper, boron, aluminum, gallium, indium, silicon, and germanium.

Claims

1. An electronic component, comprising:

a substrate;

a conductor track structure situated on the substrate; and

a functional layer which is contacted via the conductor track structure;

wherein the conductor track structure is made of a metal mixture including platinum and at least one metal selected from the group made up of rhodium, iridium, ruthenium, palladium, osmium, gold, scandium, yttrium, lanthanum, the lanthanides, titanium, zirconium, hafnium, niobium, tantalum, chromium, tungsten, rhenium, iron, cobalt, nickel, copper, boron, aluminum, gallium, indium, silicon, and germanium.

2. The electronic component as recited in claim 1, wherein the metal mixture includes:

platinum;

at least one metal selected from the group made up of titanium, zirconium, hafnium, chromium, rhenium, and aluminum; and

at least one metal selected from the group made up of rhodium, iridium, and ruthenium.

3. The electronic component as recited in claim 1, wherein the metal mixture includes:

(i) a first component including from ≧

60 atom percent to ≦

99 atom percent of platinum; and

(ii) a second component including from ≧

1 atom percent to ≦

40 atom percent of at least one metal selected from the group made up of rhodium, iridium, ruthenium, palladium, osmium, gold, scandium, yttrium, lanthanum, the lanthanides, titanium, zirconium, hafnium, niobium, tantalum, chromium, tungsten, rhenium, iron, cobalt, nickel, copper, boron, aluminum, gallium, indium, silicon, and germanium;

wherein the sum of the first and second components is 100 atom percent.

4. The electronic component as recited in claim 3, wherein the second component includes from ≧

1 atom percent to ≦

40 atom percent of rhodium, and wherein the sum of the platinum and rhodium atoms together result in 100 atom percent.

5. The electronic component as recited in claim 1, wherein at least one of:

(i) the metal mixture is a metal alloy; and

(ii) the metal mixture includes platinum cores which are each at least partially surrounded by a metal layer made of at least one metal selected from the group made up of rhodium, iridium, ruthenium, palladium, osmium, gold, scandium, yttrium, lanthanum, the lanthanides, titanium, zirconium, hafnium, niobium, tantalum, chromium, tungsten, rhenium, iron, cobalt, nickel, copper, boron, aluminum, gallium, indium, silicon, and germanium.

6. The electronic component as recited in claim 3, wherein the functional layer partially covers the conductor track structure and partially covers the substrate.

7. The electronic component as recited in claim 3, wherein the conductor track structure has a thickness which is less than the thickness of the functional layer.

8. The electronic component as recited in claim 3, wherein at least one of:

(i) the conductor track structure has a thickness from ≧

0.5 nm to ≦

100 nm; and

(ii) the functional layer has a thickness from ≧

1 nm to ≦

200 nm.

9. The electronic component as recited in claim 7, wherein the thickness of the conductor track structure is less than 50% of the thickness of the functional layer.

10. The electronic component as recited in claim 7, wherein the electronic component is a chemically sensitive field effect transistor sensor.

11. The electronic component as recited in claim 10, wherein the functional layer is one of a gate electrode or an integral part of a gate electrode of the field effect transistor.