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STRUCTURE AND METHOD FOR MAKING CRACK STOP FOR 3D INTEGRATED CIRCUITS

  • US 20110193197A1
  • Filed: 02/05/2010
  • Published: 08/11/2011
  • Est. Priority Date: 02/05/2010
  • Status: Active Grant
First Claim
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1. A structure comprising:

  • a first component having a first semiconductor substrate and a first layer with first metallization formed therein, said first component having a first annular region peripheral to a first active region;

    a second component having a second semiconductor substrate and a second layer with second metallization formed therein;

    a bonding layer whereby said second component is bonded to said first component to form a bonded structure having a composite active area and a periphery; and

    a circumferential wall adjacent to said periphery, said circumferential wall formed through said bonding layer.

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