SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREOF
First Claim
1. A semiconductor substrate, comprising:
- a substrate;
a first semiconductor layer arranged on the substrate;
a mask arranged on a first region of the first semiconductor layer;
a metallic material layer arranged on the first semiconductor layer and the mask, the metallic material layer being arranged in a direction intersecting the mask;
a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer; and
a cavity in the first semiconductor layer and arranged under the metallic material layer.
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Accused Products
Abstract
The present invention provides a method of manufacturing a gallium nitride (GaN) substrate on a heterogeneous substrate at low cost while realizing performance improvement and long operational lifespan of semiconductor devices, such as LEDs or laser diodes, which are manufactured using the GaN substrate. The semiconductor substrate includes a substrate, a first semiconductor layer arranged on the substrate, a mask arranged on a first region of the first semiconductor layer, a metallic material layer arranged on the first semiconductor layer and the mask, the metallic material layer being arranged in a direction intersecting the mask, a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer, and a cavity in the first semiconductor layer and arranged under the metallic material layer.
39 Citations
17 Claims
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1. A semiconductor substrate, comprising:
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a substrate; a first semiconductor layer arranged on the substrate; a mask arranged on a first region of the first semiconductor layer; a metallic material layer arranged on the first semiconductor layer and the mask, the metallic material layer being arranged in a direction intersecting the mask; a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer; and a cavity in the first semiconductor layer and arranged under the metallic material layer. - View Dependent Claims (2, 3, 4, 16, 17)
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5. A method of manufacturing a semiconductor substrate, the method comprising:
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forming a first semiconductor layer on a substrate; forming a mask on a first region of the first semiconductor layer; forming a metallic material layer on the first semiconductor layer and the mask, the metallic material layer being formed in a direction intersecting the mask; and forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a cavity is formed in the first semiconductor layer and arranged under the metallic material layer. - View Dependent Claims (6, 7, 8, 11, 12, 13, 14, 15)
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9. A semiconductor device, comprising:
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a semiconductor substrate, comprising; a first semiconductor layer arranged on a substrate; a mask arranged on a first region of the first semiconductor layer; a metallic material layer arranged on the first semiconductor layer and the mask, the metallic material layer being arranged in a direction intersecting the mask; a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer; and a cavity in the first semiconductor layer and arranged under the metallic material to layer, wherein the first region comprises a portion of a peripheral region on the first semiconductor layer, and the metallic material layer comprises a plurality of stripe-shaped patterns arranged at a constant interval, and each stripe-shaped pattern has a constant width; a first conductive type semiconductor layer arranged on the second semiconductor layer; an active layer arranged on the first conductive type semiconductor layer; and a second conductive type semiconductor layer arranged on the active layer.
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10. A method of manufacturing a semiconductor device, the method comprising:
forming a semiconductor substrate, comprising; forming a first semiconductor layer on a substrate; forming a mask on a first region of the first semiconductor layer; forming a metallic material layer on the first semiconductor layer and the mask, the metallic material layer being formed in a direction intersecting the mask; and forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a cavity is formed in the first semiconductor layer and arranged under the metallic material layer, the first region comprises a portion of a peripheral region on the first semiconductor layer, and wherein the metallic material layer comprises a plurality of stripe-shaped patterns formed at a constant interval, and each stripe-shaped pattern has a constant width;
forming a first conductive type semiconductor layer on the second semiconductor layer;
forming an active layer on the first conductive type semiconductor layer; and
forming a second conductive type semiconductor layer on the active layer.
Specification