Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor

• US 20110195562A1
• Filed: 10/14/2009
• Published: 08/11/2011
• Est. Priority Date: 10/16/2008
• Status: Abandoned Application

• Current Assignee: Ulvac Incorporated
• Original Assignee: Ulvac Incorporated
• Inventors: Ishibashi, Satoru, Akamatsu, Yasuhiko, Saito, Kazuya, Arai, Makoto, Kurata, Takaomi, Kiyota, Junya
• Application Number:
  US13/123,727
• Publication Number:
  US 20110195562A1
• Time in Patent Office: Days
• US Class Current: 438/481
• CPC Class Codes: C23C 14/083 of refractory metals or yttrium
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: H01J 37/3408 Planar magnetron sputtering
• CPC Class Codes: H01J 37/3455 Movable magnets

Abstract

[Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer.

[Solving Means] A sputtering apparatus according to an embodiment of the present invention is a sputtering apparatus for forming a thin-film on a surface to be processed of a substrate 10, and includes a vacuum chamber 61, a supporting portion 93, a target 80, and a magnet 83. The magnet 83 generates plasma forming a region to be sputtered 80a, and moves the region to be sputtered 80abetween a first position in which the region to be sputtered 80a is not opposed to the surface to be processed and a second position in which the region to be sputtered is opposed to the surface to be processed. With this, it is possible to weaken incident energy of sputtered particles incident on the surface to be processed of the substrate 10 from the region to be sputtered 80a, and to protect the base layer.

Claims

1. A sputtering apparatus for forming a thin-film on a surface to be processed of a substrate, comprising:

a vacuum chamber capable of keeping a vacuum state;

a supporting portion, which is arranged in an inside of the vacuum chamber, and supports the substrate;

a target, which is arranged in parallel to the surface to be processed of the substrate supported by the supporting portion, and has a surface to be sputtered; and

a plasma generation means for generating plasma forming a region to be sputtered from which sputtered particles are emitted by sputtering the surface to be sputtered, and for moving the region to be sputtered between a first position in which the region to be sputtered is not opposed to the surface to be processed and a second position in which the region to be sputtered is opposed to the surface to be processed.

2. The sputtering apparatus according to claim 1, wherein

the plasma generation means includes a magnet for forming a magnetic field on a side of the surface to be sputtered of the target, and

the magnet is arranged to be movable relative to the supporting portion.

3. The sputtering apparatus according to claim 2, wherein the surface to be sputtered includes

a first region in which the surface to be sputtered is not opposed to the surface to be processed, and

a second region in which the surface to be sputtered is opposed to the surface to be processed;

and

the magnet is arranged to be movable between the first region and the second region.

4. The sputtering apparatus according to claim 2, wherein the target moves together with the magnet.

5. A thin-film forming method, comprising:

arranging a substrate, which has a surface to be processed, in a vacuum chamber;

generating plasma for sputtering a target; and

moving a region to be sputtered of the target between a first position in which the region to be sputtered of the target is not opposed to the surface to be processed and a second position in which the region to be sputtered of the target is opposed to the surface to be processed.

6. A manufacturing method for a field effect transistor, comprising:

forming a gate insulating film on a substrate;

arranging the substrate in an inside of a vacuum chamber in which a target having In-Ga-Zn-O-based composition is arranged;

generating plasma for sputtering the target;

moving a region to be sputtered of the target between a first position in which the region to be sputtered of the target is not opposed to the surface to be processed and a second position in which the region to be sputtered of the target is opposed to the surface to be processed, to thereby form an active layer on the gate insulating film.