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LIQUID CRYSTAL DISPLAY DEVICE

  • US 20110198595A1
  • Filed: 04/26/2011
  • Published: 08/18/2011
  • Est. Priority Date: 07/20/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    a gate insulating film formed over the gate electrode;

    a microcrystalline semiconductor film including a channel formation region formed over the gate insulating film;

    a channel protective layer which is formed over the channel formation region of the microcrystalline semiconductor film;

    a source region and a drain region formed over the channel protective layer; and

    a source electrode and a drain electrode formed over the source region and the drain region,an insulating film formed over the channel protective layer, the source electrode, and the drain electrode,wherein end portions of the microcrystalline semiconductor film which is formed to overlap with the gate electrode are positioned more inwardly than end portions of the gate electrode.

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