METHOD FOR MAKING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS OBTAINED BY THE METHOD, METHOD FOR MAKING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE OBTAINED BY THE METHOD, AND METHOD FOR MAKING DISPLAY APPARATUS AND DISPLAY APPARATUS OBTAINED BY THE METHOD

• US 20110198600A1
• Filed: 04/26/2011
• Published: 08/18/2011
• Est. Priority Date: 05/18/2007
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Hayashi, Naoki, Arai, Toshiaki
• Granted Patent: US 8,222,647 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized.

Claims

1. A semiconductor apparatus comprising:

a substrate; and

a laminate structure formed on said substrate that includes an insulating film made of a metal oxide and a semiconductor thin film,

wherein,

said insulating film and said semiconductor thin film are both crystallized.

2. The semiconductor apparatus of claim 1, wherein said insulating film and said semiconductor thin film have at least fine crystallinity, respectively.

3. The semiconductor apparatus of claim 1, wherein:

said insulating film is a gate insulating film, and

a portion superposed with said gate electrode has crystallinity higher than the other portions.

4. The semiconductor device of claim 1, wherein:

said insulating film is a gate insulating film laminated with a silicon-based insulating film, and

said silicon-based insulating film, said insulating film made of the metal oxide, and said semiconductor thin film are laminated on said substrate in this order so as to cover a gate electrode formed on said substrate.

5. A display apparatus comprising:

a substrate;

a thin film transistor and a pixel electrode connected thereto on said substrate; and

a laminate structure of a gate insulating film made of a metal oxide and a semiconductor thin film on said substrate,

wherein,

said gate insulating film and said semiconductor thin film are crystallized, respectively.

6. The display device of claim 5, wherein said insulating film and said semiconductor thin film have at least fine crystallinity, respectively.

7. The display device of claim 5, wherein:

said insulating film is a gate insulating film, and

a portion superposed with said gate electrode has crystallinity higher than the other portions.

8. The display device of claim 5, wherein:

said insulating film is a gate insulating film laminated with a silicon-based insulating film, and

said silicon-based insulating film, said insulating film made of the metal oxide, and said semiconductor thin film are laminated on said substrate in this order so as to cover a gate electrode formed on said substrate.